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absorbing Datasheet PDF File

For absorbing Found Datasheets File :: 727 Search Time::1.171ms
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				Hitachi Semiconductor
Part No.	BIC702C
OCR Text	...thstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions. * Provide mini mold package; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. ...
Description	Bias Controlled Monolithic IC UHF RF Amplifier Bias Controlled Monolithic IC VHF/UHF RF Amplifier
File Size	62.67K / 11 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	LC78681E
OCR Text	...emodulation signals, as well as absorbing up to 4 frames of jitter due to fluctuations in the speed of disc rotation. * Performs unscrambling and deinterleaving for rearranging the EFM demodulation signals into the specified sequence. * Per...
Description	Digital Signal Processor for Compact Disk Players Digital Signal Processor for Compact Disc Players
File Size	250.24K / 23 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	BB305M
OCR Text	...thstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking ...
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	68.38K / 12 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	BB405M BB405 HITACHILTD.-BB405M
OCR Text	...thstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marki...
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	58.46K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	BB601M
OCR Text	...thstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4R(SOT-143mod) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking...
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
File Size	65.76K / 13 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	TBB1010
OCR Text	...thstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. * Provide mini mold packages; CMPAK-6 Outline CMPAK-6 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) ...
Description	Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
File Size	67.12K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	BB403M BB403
OCR Text	...thstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4R (SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Ma...
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	73.63K / 14 Page	View it Online	Download Datasheet

				LEMO S.A. etc
Part No.	TP339UG
OCR Text	...diation monitor switch system * absorbing measurement for gas analysis * Thermoelectric converter * Heat flux flowmeter OPTO TECH CORPORATION OPTO TECH Microelectronics Business Division Since 1983 2003.01 1 / 16 Tel: 886-3-56...
Description	THERMOPILE 热电
File Size	336.34K / 16 Page	View it Online	Download Datasheet

For absorbing Found Datasheets File :: 727 Search Time::1.171ms
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