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2750060 2SC5568 222MR PA43A E000212 UPC554C 2N390 4V105
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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2sB631 2sB631K 2sD600 2sD600K
OCR Text ...Tj Tstg 8 150 -55 to +150 c c Electrical characteristics at Ta = 25c Parameter collector-to-Base Breakdown Voltage collector-to-Em...s control systems, or other applications whose failure can be reasonably expected to result in serio...
Description NPN Epitaxial Planar silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体

File Size 114.39K  /  4 Page

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    2SB642

PANASONIC[Panasonic Semiconductor]
Part No. 2sB642
OCR Text ... -55 ~ +150 Unit V V V mA mA mW c c 1:Base 2:collector 3:Emitter 3 0.550.1 1.250.05 0.450.05 2 1 2.5 2.5 EIAJ:sc-71 M Type Mold Package s Electrical characteristics Parameter collector cutoff current collector to...
Description silicon PNP epitaxial planer type(silicon PNP epitaxial planer type)

File Size 49.24K  /  3 Page

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    2SB643 2SB644 2SD639 2SD638

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2sB643 2sB644 2sD639 2sD638
OCR Text ...orage temperature V V A A mW c c 1:Base 2:collector 3:Emitter EIAJ:sc-71 M Type Mold Package 2.5 2.5 s Electrical characteristics Parameter collector cutoff current collector to base voltage collector to emitter voltage Emitter to ...
Description silicon PNP epitaxial planer type(For low-power general amplification)

File Size 38.74K  /  2 Page

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    2SB647 2SB647A

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2sB647 2sB647A
OCR Text ...50 -55 to +150 Unit V V V A A W c c Electrical characteristics (Ta = 25c) 2sB647 Item collector to base breakdown voltage collector to e...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Transistor
silicon PNP Epitaxial

File Size 32.10K  /  6 Page

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    2SB649 2SB649A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2sB649 2sB649A
OCR Text ...tion symbol VcBO VcEO VEBO Ic I c(peak) Pc Pc * Junction temperature storage temperature Note: 1. Value at Tc = 25c Tj Tstg 1 2sB649 -18...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial

File Size 34.81K  /  8 Page

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    2SB709A 2SD601A

PANASONIC[Panasonic Semiconductor]
Part No. 2sB709A 2sD601A
OCR Text ...50 -55 ~ +150 V V V mA mA mW c c 1:Base 2:Emitter 3:collector JEDEc:TO-236 EIAJ:sc-59 Mini Type Package s Electrical characteristics Parameter collector cutoff current collector to base voltage collector to emitter voltage Emit...
Description silicon PNP epitaxial planer type

File Size 47.56K  /  3 Page

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    2SB710 2SB710A 2SB0710 2SB0710A

PANASONIC[Panasonic Semiconductor]
Part No. 2sB710 2sB710A 2sB0710 2sB0710A
OCR Text ...-1 200 150 -55 to +150 V A A mW c c V Unit V 10 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 1.1+0.2 -0.1 collector-emitter voltage 2sB071...s No-rank classified and have no hFE1 85 to 170 120 to 240 170 to 340 85 to 340 marking symbol for r...
Description silicon PNP epitaxial planar type

File Size 76.25K  /  3 Page

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    2SB715 2SB716 2SB716A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2sB715 2sB716 2sB716A
OCR Text ...50 -55 to +150 Unit V V V mA mW c c Electrical characteristics (Ta = 25c) 2sB715 Item collector to base breakdown voltage collector to e...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial 硅外延进步党
silicon PNP Transistor

File Size 31.71K  /  6 Page

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    2SB726 2SA1748

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2sB726 2sA1748
OCR Text ... +0.2 123 2.30.2 mA mW c c 2.540.15 1:Emitter 2:collector 3:Base JEDEc:TO-92 EIAJ:sc-43A s Electrical characteristics Parameter collector cutoff current collector to base voltage collector to emitter voltage Emitter to base...
Description silicon PNP epitaxial planer type

File Size 34.69K  /  2 Page

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    2SB727 2SB727K

HITACHI[Hitachi Semiconductor]
Part No. 2sB727 2sB727K
OCR Text ... 25color='#FF0000'>c symbol VcBO VcEO VEBO Ic I c(peak) Pc * Tj Tstg 1 Rating -120 -120 -7 -6 -10 40 150 -55 to +150 Unit V V V A A W c c 2sB727(K...s s Unit V V A A Test conditions I c = -25 mA, RBE = I E = -50 mA, Ic = 0 VcB = -120 V, IE = 0 VcE ...
Description silicon PNP Epitaxial

File Size 36.22K  /  6 Page

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