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    2SK1085-M

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
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Part No. 2SK1085-M
OCR Text ... DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 3 12 3 20 20 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Thre...
Description N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 177.09K  /  2 Page

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    2SK1088 2SK1088-M

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FUJI[Fuji Electric]
Part No. 2SK1088 2SK1088-M
OCR Text ... DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 9 36 9 20 35 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Thre...
Description N-channel MOS-FET

File Size 181.89K  /  2 Page

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    2SK1089

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FUJI[Fuji Electric]
Part No. 2SK1089
OCR Text ... DS ID I D(puls) I DR V GS PD T ch T stg Rating 60 35 140 35 20 80 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Th...
Description N-channel MOS-FET

File Size 198.93K  /  2 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ... DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 6 24 6 20 30 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Thre...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S

HITACHI[Hitachi Semiconductor]
Part No. 2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text ...1.0 TC = 25C 0.05 0.02 ch-c(t) = S (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM D = PW T 0.03 0.01 ot Pu h 1S lse T 100 1m 10 m 100 m Pulse Width PW (s) PW 1 0.01 10 10 Switching Time Test Circuit Vin Monitor Vou...
Description    Silicon N-Channel MOS FET
Power switching MOSFET

File Size 47.75K  /  9 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ... 1m 10 m Pulse Width PW (s) ch-c(t) = S (t) * ch-c ch-c = 4.17C/W, TC = 25C PDM D = PW T PW T 100 m 1 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (of...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 47.74K  /  9 Page

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    2SK1155 2SK1156

HITACHI[Hitachi Semiconductor]
Part No. 2SK1155 2SK1156
OCR Text ....0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 2.50C/W, TC = 25C PDM PW T 1m 10 m Pulse Width PW (s) 100 m 1 D = PW T 0.02 .01 0.03 0 lse Pu hot 1S 0.01 10 100 10 Switching Time Test Circuit Vin Monitor Vout Monit...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 48.47K  /  9 Page

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    2SK1157 2SK1158

Hitachi Semiconductor
Part No. 2SK1157 2SK1158
OCR Text ... 0.3 0.1 0.2 0.1 0.05 0.02 0.03 ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM PW 1 D = PW T 0.01 10 0.01 ulse tP ho 1S 100 1m 10 m Pulse Width PW (s) 100 m T 10 Switching Time Test Circuit Vin Monitor Vout Monitor D...
Description Silicon N-Channel MOS FET

File Size 48.24K  /  9 Page

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    2SK1159 2SK1160

Hitachi Semiconductor
Part No. 2SK1159 2SK1160
OCR Text ....2 0.1 0.05 0.02 0.01 P hot ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM uls e 0.03 D= T 100 1m 10 m Pulse Width PW (s) 100 m PW PW T 1S 0.01 10 1 10 Switching Time Test Circuit Vin Monitor Vout Monitor D...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1161 2SK1162

Hitachi Semiconductor
Part No. 2SK1161 2SK1162
OCR Text ... 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM D = PW T 0.03 1S 0.01 10 h ul ot P se T 100 1m 10 m Pulse Width PW (s) 100 m PW 1 10 4 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 ...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 33.64K  /  6 Page

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