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  chip-immune Datasheet PDF File

For chip-immune Found Datasheets File :: 727    Search Time::2.078ms    
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    5962R9858301VXA UT80CRH196KD-WCA UT80CRH196KD-WCC UT80CRH196KD-WCX UT80CRH196KD-WPC

Aeroflex Circuit Technology
Part No. 5962R9858301VXA UT80CRH196KD-WCA UT80CRH196KD-WCC UT80CRH196KD-WCX UT80CRH196KD-WPC
OCR Text ...ternal memory devices. 1.1.1.1 chip configuration register the chip configuration register (ccr) is used to initialize the ut80crh196kd immediately after reset. the ccr is fetched...
Description 16-bit microcontroller: SMD. Lead finish solder. Class V. 20MHz. Total dose 1E5rads(Si0.
Microcontroller. Lead finish solder.
Microcontroller. Lead finish gold.
Microcontroller. Lead finish optional.
Microcontroller. Lead finish gold. Prototype.

File Size 203.04K  /  41 Page

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    IXDD404 IXDD404PI IXDD404SI IXDD404SI-16 IXDD404SIA

IXYS[IXYS Corporation]
Part No. IXDD404 IXDD404PI IXDD404SI IXDD404SI-16 IXDD404SIA
OCR Text ...Two identical drivers in single chip General Description The IXDD404 is comprised of two 4 Amp CMOS high speed MOSFET drivers. Each outp...immune to latch up over the entire operating range. Designed with small internal delays, cross condu...
Description From old datasheet system
4 Amp Dual Low-Side Ultrafast MOSFET Driver

File Size 663.63K  /  10 Page

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    A3212EEHLT A3212EEHLT-T

Allegro MicroSystems
Part No. A3212EEHLT A3212EEHLT-T
OCR Text ...ce includes on a single silicon chip a Hall-voltage generator, small-signal amplifier, chopper stabilization, a latch, and a MOSFET output. ...immune to thermal stress, and have precise recoverability after temperature cycling. A relatively hi...
Description MICROPOWER, ULTRA-SENSITIVE HALL-EF FECT SWITCH

File Size 384.40K  /  12 Page

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    DEIC420

Directed Energy
IXYS[IXYS Corporation]
Part No. DEIC420
OCR Text ...ads provide power to the entire chip. The range for this voltage is from 8V to 30V. Input signal-TTL or CMOS compatible. Driver Output. For application purposes, this lead is connected, directly to the Gate of a MOSFET The system ground lea...
Description 20 Ampere Low-Side Ultrafast RF MOSFET Driver

File Size 154.93K  /  7 Page

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    8Q1024K8SRAM 8Q1024K8SR UT8Q1024K8-UWX 8Q1024K8 UT8Q1024K8 UT8Q1024K8-UPA UT8Q1024K8-UPC UT8Q1024K8-UPX UT8Q1024K8-UWA U

Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
Part No. 8Q1024K8SRAM 8Q1024K8SR UT8Q1024K8-UWX 8Q1024K8 UT8Q1024K8 UT8Q1024K8-UPA UT8Q1024K8-UPC UT8Q1024K8-UPX UT8Q1024K8-UWA UT8Q1024K8-UWC
OCR Text ...ol is provided by an active LOW chip enable (En), an active LOW output enable (G). This device has a power-down feature that reduces power consumption by more than 90% when deselected. Writing to each memory is accomplished by taking one of...
Description high-performance 1M byte (8Mbit) CMOS static RAM 高性能1M字节Mbit)的CMOS静态RAM
10 AMP MINIATURE POWER RELAY 高性能1M字节Mbit)的CMOS静态RAM

File Size 234.50K  /  15 Page

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    5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 5962L9960701QXA 5962L9960701QXC 5962L9960701QXX 5962L9960701TUA 5962L996

Aeroflex Circuit Technology
Part No. 5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 5962L9960701QXA 5962L9960701QXC 5962L9960701QXX 5962L9960701TUA 5962L9960701TUC 5962L9960701TUX 5962L9960701TXA 5962L9960701TXC 5962L9960702QUA 5962L9960701TXX 5962L9960702QUC 5962L9960702QUX 5962L9960702QXA 5962L9960702QXC 5962L9960702QXX 5962L9960702TUA 5962L9960702TUC 5962L9960702TUX 5962D9960703TXC 5962D9960701TXC 5962D9960702TXC 5962D9960704TXC 5962L9960702TXC 5962L9960703TXC 5962L9960704TXC 5962P9960701TXC 5962P9960702TXC 5962D9960701QUA 5962D9960701QUC 5962D9960701QUX 5962D9960701QXA 5962D9960701QXC 5962D9960701TUA 5962D9960701QXX 5962D9960701TUC 5962D9960701TUX 5962P9960701TXA 5962D9960701TXA 5962D9960704TUA 5962D9960702TUA 5962P9960703TXC UT8Q512-UWX 5962D9960704TXA 5962D9960702TXX 5962D9960704TXX 5962L9960702TXX 5962P9960701TUA 5962P9960701TUX 5962P9960701TUC 5962D9960703TUC 5962L9960703TUC 5962L9960704TUC 5962P9960702TUC 5962P9960703TUC UT8Q512-20UWC UT8Q512-UWC 5962D9960703TUX 5962D9960704QXA 5962D9960704QXC 5962D9960704QXX
OCR Text ...n is provided by an active low chip enable ( e ) , an active low output enable ( g ), and three-state drivers. this device has a power-down feature that reduces power consumption by more than 90% when deselected . writing to the devic ...
Description 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si)
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow.
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si)
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)

File Size 127.88K  /  15 Page

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For chip-immune Found Datasheets File :: 727    Search Time::2.078ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

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