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  class-ab Datasheet PDF File

For class-ab Found Datasheets File :: 4948    Search Time::2.531ms    
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    PTB20189

ERICSSON[Ericsson]
Part No. PTB20189
OCR Text ... transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are use...
Description UHF TV Linear Power Transistor Cellular Radio RF Power Transistor

File Size 46.95K  /  3 Page

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    PTB20190

ERICSSON[Ericsson]
Part No. PTB20190
OCR Text class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically intended to operate uncorrected at 125 watts P-Sync (tested...
Description 175 Watts, 470-806 MHz Digital Television Power Transistor

File Size 548.99K  /  4 Page

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    PTB20191

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20191
OCR Text class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold...
Description 12 Watts, 1.78?.92 GHz RF Power Transistor
12 Watts, 1.78-1.92 GHz RF Power Transistor

File Size 424.19K  /  3 Page

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    PTB20193

Ericsson
Part No. PTB20193
OCR Text class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation...
Description 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor

File Size 519.22K  /  3 Page

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    PTB20195

ERICSSON[Ericsson]
Part No. PTB20195
OCR Text class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and...
Description 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor

File Size 47.39K  /  3 Page

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    PTB20216

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTB20216
OCR Text class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride su...
Description 6 Watts/ 1.8-2.0 GHz RF Power Transistor
6 Watts, 1.8-2.0 GHz RF Power Transistor

File Size 391.38K  /  2 Page

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    PTB20219

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTB20219
OCR Text class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and PEP applications. Ion implantation, nitride surface passiv...
Description 70 Watts/ 925-960 MHz Cellular Radio RF Power Transistor
70 Watts, 925-960 MHz Cellular Radio RF Power Transistor

File Size 563.11K  /  4 Page

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    PTB20220

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTB20220
OCR Text class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications, it may be used for both CW and PEP applications. Ion impl...
Description 15 Watts/ 915-960 MHz Cellular Radio RF Power Transistor
15 Watts 915-960 MHz Cellular Radio RF Power Transistor
15 Watts, 915-960 MHz Cellular Radio RF Power Transistor

File Size 512.40K  /  3 Page

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    PTB20228

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTB20228
OCR Text class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation a...
Description 6.5 Watts/ 1.62-1.66 GHz RF Power Transistor
6.5 Watts 1.62-1.66 GHz RF Power Transistor
6.5 Watts, 1.62-1.66 GHz RF Power Transistor

File Size 446.61K  /  3 Page

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    PTB20230

ERICSSON[Ericsson]
Part No. PTB20230
OCR Text class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or...
Description 45 Watts 1.8-2.0 GHz PCN/PCS Power Transistor
45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor

File Size 151.57K  /  4 Page

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For class-ab Found Datasheets File :: 4948    Search Time::2.531ms    
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