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For cmd Found Datasheets File :: 1157 Search Time::1.25ms
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				http:// NEC[NEC] NEC Corp. NEC, Corp.
Part No.	MC-4R64CPE6C-845 MC-4R64CPE6C MC-4R64CPE6C-653 MC-4R64CPE6C-745
OCR Text	...S I/O Voltage. Used for signals cmd, SCK, SIN, SOUT. Supply voltage for the RDRAM core and interface logic. Logic threshold reference voltage for RSL signals. 6 Preliminary Data Sheet M14805EJ2V0DS00 MC-4R64CPE6C Remarks 1. Ramb...
Description	DRAGONBALL MXL DIE SALE Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT 直接Rambus的内存RIMM400模块技2M的字x 16
File Size	127.75K / 16 Page	View it Online	Download Datasheet

				http:// NEC[NEC] NEC Corp.
Part No.	MC-4R96CEE6C-845 MC-4R96CEE6B MC-4R96CEE6B-653 MC-4R96CEE6B-745 MC-4R96CEE6B-845 MC-4R96CEE6C MC-4R96CEE6C-653 MC-4R96CEE6C-745
OCR Text	...S I/O Voltage. Used for signals cmd, SCK, SIN, SOUT. Supply voltage for the RDRAM core and interface logic. Logic threshold reference voltage for RSL signals. 6 Preliminary Data Sheet M14538EJ1V1DS00 MC-4R96CEE6B, 4R96CEE6C Rema...
Description	Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT
File Size	125.43K / 16 Page	View it Online	Download Datasheet

				http:// NEC[NEC] NEC Corp. NEC, Corp.
Part No.	MC-4R96CPE6C-845 MC-4R96CPE6C MC-4R96CPE6C-653 MC-4R96CPE6C-745 NECCORP.-MC-4R96CPE6C-745
OCR Text	...S I/O Voltage. Used for signals cmd, SCK, SIN, SOUT. Supply voltage for the RDRAM core and interface logic. Logic threshold reference voltage for RSL signals. 6 Preliminary Data Sheet M14806EJ2V0DS00 MC-4R96CPE6C Remarks 1. Ramb...
Description	Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT 直接Rambus的内存模9600 RIMM的技800字16 Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT 直接Rambus的内存模600 RIMM的技800字16
File Size	129.01K / 16 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R881869D K4R571669D
OCR Text	... DQB4 DQB6 GND GND GND VDD DQA8 cmd VDD DQA5 GND GNDa GNDa VDD CTM VDD RQ7 GND GND VDD RQ1 VDD DQB1 GND GND VCMOS DQB7 VDD DQB8 GND VDD GND VDD GND VDD VDD VDD VDD GND VDD VDD DQA7 DQA3 DQA1 CTMN RQ5 RQ3 DQB3 DQB5...
Description	256/288Mbit RDRAM(D-die)
File Size	309.27K / 20 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4R271669F
OCR Text	...ND RQ7 CTM VDD RQ1 RQ4 DQA7 GND cmd DQA4 DQA5 VDD CFM DQA2 GND CFMN VDDA GNDA RQ5 RQ6 VDD RQ3 RQ2 GND Direct RDRAMTM DQB0 DQB1 VDD DQB4 DQB5 VDD DQB7 GND SIO0 GND DQB2 RQ0 GND DQB6 DQB3 SIO1 VCMOS NC A B C D...
Description	128Mbit RDRAM(F-die)
File Size	289.35K / 20 Page	View it Online	Download Datasheet

				Winbond Electronics Corp
Part No.	W55MID50
OCR Text	...ymbol D3 D2 D1 D0 XIN XOUT VSS cmd CLK VDD RX_VDD RX_VSS ENV RESET TagIn COIL TX_VSS TX_VDD PAD No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 I/O O O O O I O GND I/O I Power Power GND I I O O GND Power Functional Description ...
Description	From old datasheet system WINBOND MFID READER
File Size	289.91K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	X5643S14 X5643S14-2.7 X5643S14-2.7A X5643S14-4.5A X5643S14I X5643S14I-4.5A X5645S14I-4.5A X5643 X5643P X5643P-4.5A X5645 X5645P X5645P-4.5A X5645S14 X5645S14-2.7 X5645S14-2.7A X5645S14-4.5A X5645S14I
OCR Text	...le 2. Block Protect Matrix WREN cmd WEL 0 1 1 1 Status Register WPEN X 1 0 X Device Pin WP# X 0 X 1 Block Protected Block Protected Protected Protected Protected Block Unprotected Block Protected Writable Writable Writable ...
Description	Film Capacitor; Voltage Rating:600VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.033uF; Capacitance Tolerance: /- 10%; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Series:WMF RoHS Compliant: No Film Capacitor; Voltage Rating:600VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.001uF; Capacitance Tolerance: 10%; Leaded Process Compatible:Yes; Series:WMF; Termination:Axial Leaded; Working Voltage, DC:600V RoHS Compliant: Yes CPU Supervisor with 64Kbit SPI EEPROM
File Size	306.26K / 19 Page	View it Online	Download Datasheet

				CML[Chicago Miniature Lamp,inc]
Part No.	cmd15-21VYD_TR8 cmd15-22VRVGC_TR8 cmd15-21 cmd15-21SRC_TR8 cmd15-21UBC_TR8 cmd15-21UGC_TR8 cmd15-21USOC_TR8 cmd15-21UYC_TR8 cmd15-21VGC_TR8 cmd15-21VGD_TR8 cmd15-21VRC_TR8 cmd15-21VRD_TR8 cmd15-21VYC_TR8 cmd15-22SRUGC_TR8 cmd15-21UGC/TR8 cmd15-21VGC/TR8 cmd15-21VRD/TR8 cmd15-21UBC/TR8 cmd15-21SRC/TR8 cmd15-21USOC/TR8 cmd15-21UYC/TR8 cmd15-21VGD/TR8 cmd15-21VRC/TR8 cmd15-21VYC/TR8 cmd15-21VYD/TR8 cmd15-22SRUGC/TR8 cmd15-22VRVGC/TR8
OCR Text	cmd15-21 & 22 Series SMT LEDs 1206 Package Size DESCRIPTION AND FEATURES cmd 15-21 CA T HO DE MA R K 3.20 . 0 20 1. 40 2. 70 cmd15-22 BI-COLOR C A T H O DE MA SK 1.50 . 0 20 2. 00 2.00 . 0 20 1.10 . 0 20 1. 10 3. 20 0. 60 ...
Description	SMT LEDs 1206 Package Size
File Size	241.62K / 1 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	EF9345 1783
OCR Text	...5 BLOCK DIAGRAM +5V STA cmd ROW BUFFER 120 x 8 AD(0:7) 8 9 R G B AS DS 14 15 8 16 16 R1 8 ROM R2 R3 8 ATTRIBUTE LOGIC 7 10 I R/W CS MPU ACCESS DATA BUS MAT PAT R4 R3 R5 R3 ...
Description	From old datasheet system HMOS2 SINGLE CHIP SEMI-GRAPHIC DISPLAY PROCESSOR
File Size	551.93K / 38 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
OCR Text	... DQB3 SIO0 VCMOS DQB8* DQA7 GND cmd DQA4 VDD DQA5 CFM GND DQA2 CFMN GNDa VDDa RQ5 VDD RQ6 RQ3 GND RQ2 DQB0 VDD DQB1 DQB4 VDD DQB5 DQB7 GND SIO1 GND VDD VDD GND SAMSUNG 050 K4Rxxxx69B-Nxxx For normal package, pin #1(ROW 1, COL A) is lo...
Description	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
File Size	304.91K / 20 Page	View it Online	Download Datasheet

For cmd Found Datasheets File :: 1157 Search Time::1.25ms
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