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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD12MVS1
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OCR Text |
...
f=175MHz Zin*
Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance
RD12MVS1
MITSUBISHI ELECTRIC 4/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING... |
Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
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File Size |
428.96K /
7 Page |
View
it Online |
Download Datasheet |
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Motorola, Inc MOTOROLA[Motorola Inc]
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Part No. |
MRF18090A MRF18090AS
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OCR Text |
...j2.23 0.82 + j2.90
= Complex conjugate of the source impedance.
ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain... |
Description |
MRF18090A, MRF18090AS 1.80-1.88 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs 1.80 - 1.88 GHz 90 W 26 V LATERAL N-CHANNEL RF POWER MOSFETS 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETS
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File Size |
171.46K /
8 Page |
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it Online |
Download Datasheet |
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Motorola
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Part No. |
MRF9045
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OCR Text |
...0.16 2.6 + j0.10 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. ... |
Description |
MRF9045R1, MRF9045LSR1 945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
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File Size |
387.02K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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