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TY Semiconductor Co., Ltd
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| Part No. |
SI2324DS
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| OCR Text |
...e threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.8 - v drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 1.5 a...spice device model si2324ds vishay siliconix notes a. pulse test; pulse width ... |
| Description |
N-Channel Vertical DMOS Macro Model Level 3 MOS
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| File Size |
137.95K /
2 Page |
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it Online |
Download Datasheet
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http://
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| Part No. |
SI4409DY
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| OCR Text |
...reshold voltage v gs(t h ) v ds = v gs , i d = ? 250 a 2 . 4 v on-state drain current a i d ( on) v ds ? 5 v, v gs =...spice device model si4409d y comparison of model wit h measured dat a (t j =2 5 c unless ot her... |
| Description |
P-Channel 150-V (D-S) MOSFET
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| File Size |
191.76K /
4 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
SI2323CDS
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| OCR Text |
...e threshold voltage v gs(th) v ds = v gs , i d = - 250 a 0.75 - v drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d =...spice device model si2323cds vishay siliconix notes a. pulse test; pulse width ... |
| Description |
P-Channel Vertical DMOS Macro Model Level 3 MOS
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| File Size |
131.66K /
2 Page |
View
it Online |
Download Datasheet |
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|
http://
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| Part No. |
SI4401DDY
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| OCR Text |
...e threshold voltage v gs(th) v ds = v gs , i d = - 250 a 1.3 - v drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = -...spice device model si4401ddy vishay siliconix comparison of model with measured data t j = 25 c, un... |
| Description |
P-Channel 40 V (D-S) MOSFET
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| File Size |
69.48K /
4 Page |
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it Online |
Download Datasheet |
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