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				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC
Part No.	CL8830
OCR Text	...-theater audio and custom audio effects * Basic Karaoke functions (mic echo, key control, stereo vocal cancel and voice detect) * Professional Karaoke functions such as vocal harmony, vocal chorus, vocal scoring, vocal flange, vocal reverb,...
Description	MPEG-2 AUDIO/VIDEO PROCESSOR WITH REALSONIC AUDIO
File Size	587.75K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSR2N7550T1
OCR Text	... characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )).the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters an...
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
File Size	163.00K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRH4054 IRH3054 IRH8054 IRH7054 IRH4054PBF
OCR Text	...oth Total Dose and Single Event effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well establish...
Description	Simple Drive Requirements 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AE package RADIATION HARDENED POWER MOSFET THRU-HOLE 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
File Size	237.88K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSF2N7262 JANSG2N7262 IRHF4230
OCR Text	...oth total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well establi...
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE
File Size	292.34K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNJ7430SE
OCR Text	...oth Total Dose and Single Event effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well establi...
Description	500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
File Size	119.21K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] http://
Part No.	P6SMBXXXAT3G P6SMBXXXAT3 P6SMB100AT3 P6SMB10AT3 P6SMB110AT3 P6SMB11AT3 P6SMB120AT3 P6SMB12AT3 P6SMB130AT3 P6SMB13AT3 P6SMB150AT3 P6SMB15AT3 P6SMB160AT3 P6SMB16AT3 P6SMB170AT3 P6SMB180AT3 P6SMB18AT3 P6SMB200AT3 P6SMB20AT3 P6SMB22AT3 P6SMB24AT3 P6SMB27AT3 P6SMB30AT3 P6SMB33AT3 P6SMB36AT3 P6SMB39AT3 P6SMB43AT3 P6SMB47AT3 P6SMB51AT3 P6SMB56AT3 P6SMB6.8AT3 P6SMB6_07 P6SMB62AT3 P6SMB68AT3 P6SMB7.5AT3 P6SMB75AT3 P6SMB8.2AT3 P6SMB82AT3 P6SMB9.1AT3 P6SMB91AT3 P6SMB100AT3G P6SMB150AT3G P6SMB43AT3G
OCR Text	...hown in Figure 5. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage acro...
Description	600 W Transient Voltage Suppressors 43 V SMB Unidirectional; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 600 W Transient Voltage Suppressors 150 V SMB Unidirectional; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 W Transient Voltage Suppressors 100 V SMB Unidirectional; Package: SMB; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE 600 Watt Peak Power Zener Transient Voltage Suppressors
File Size	67.61K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNA8064 IRHNA7064
OCR Text	...tron and heavy ion Single Event effects (SEE) environments. Single Event effects characterization is shown in Table 3. Table 1. Low Dose Rate Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate ...
Description	TRANSISTOR N-CHANNEL
File Size	81.43K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNA58064 IRHNA53064 IRHNA54064 IRHNA57064
OCR Text	... characterized for Single Event effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and m...
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
File Size	177.71K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHM53Z60 IRHM54Z60 IRHM57Z60 IRHM58Z60
OCR Text	... characterized for Single Event effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and m...
Description	30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
File Size	118.38K / 8 Page	View it Online	Download Datasheet

For effects Found Datasheets File :: 14501 Search Time::3.125ms
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