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For exposure Found Datasheets File :: 72467    Search Time::0.89ms    
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    NV4V31MF12

Renesas Electronics Corporation
Part No. NV4V31MF12
OCR Text ...le laser radiation avoid direct exposure to beam output power 450 mw max wavelength 400 to 420 nm class lllb laser product avoid exposure-visible laser radiation is emitted from this aperture semiconductor laser warning laser beam a...
Description Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source

File Size 237.29K  /  9 Page

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    M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1

SGS Thomson Microelectronics
STMicroelectronics
意法半导
Part No. M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-3F6
OCR Text ...s specification is not implied. exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. Figure 2. DIP Pin Connect...
Description NMOS 32K (4K x 8) UV EPROM, 250ns
From old datasheet system
NMOS 32K 4K x 8 UV EPROM
NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外线擦除EPROM)

File Size 91.33K  /  9 Page

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    NV4V31MF-A

California Eastern Labs
Part No. NV4V31MF-A
OCR Text ...ser radiation avoid eye or skin exposure to direct or scattered radiation output power 3w max wavelength 400 to 680nm class iv laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser ...
Description Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source

File Size 732.33K  /  9 Page

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    LZ2353 LZ2353B LZ2354BJ

Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
Part No. LZ2353 LZ2353B LZ2354BJ
OCR Text ...form illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pix...
Description 1/3-type CCD Area Sensors with 410 k Pixels 1/3-type传感器与防治荒漠化面410万像

File Size 92.44K  /  12 Page

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    LZ2363B LZ2364BJ

SHARP[Sharp Electrionic Components]
Part No. LZ2363B LZ2364BJ
OCR Text ...form illumination. The standard exposure conditions are defined as when Vo is 150 mV. 3. The image area is divided into 10 x 10 segments under the standard exposure conditions. Each segment's voltage is the average output voltage of all pix...
Description 1/3-type CCD Area Sensors with 470 k Pixels

File Size 91.54K  /  12 Page

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    NX5522 NX5522EH NX5522EK

California Eastern Labs
Part No. NX5522 NX5522EH NX5522EK
OCR Text ...le laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warn...
Description 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

File Size 177.13K  /  7 Page

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    NX5522EH NX5522EK

Renesas Electronics Corporation
Part No. NX5522EH NX5522EK
OCR Text ...le laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warn...
Description LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

File Size 190.35K  /  8 Page

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    NX5521 NX5521EH

California Eastern Labs
Part No. NX5521 NX5521EH
OCR Text ...le laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this aperture semiconductor laser warn...
Description 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

File Size 174.31K  /  7 Page

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    NOIV1SN5000A-QDC NOIV1SE5000A-QDC

ON Semiconductor
Part No. NOIV1SN5000A-QDC NOIV1SE5000A-QDC
OCR Text ...ral interface (spi) ? automatic exposure control (aec) ? phase locked loop (pll) ? high dynamic range (hdr) ? dual power supply (3.3 v and 1.8 v) ? 0 c to 70 c operational temperature range ? 68-pin lcc ? 1000 mw power dissipation in 10-b...
Description VITA 5000 5.3 Megapixel 75 FPS Global Shutter CMOS Image Sensor
   VITA 5000 5.3 Megapixel 75 FPS Global Shutter CMOS Image Sensor

File Size 782.41K  /  71 Page

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    SHARP[Sharp Electrionic Components]
Part No. LZ23J3V LR36685
OCR Text ... with ABL larger than 500 times exposure of the standard exposure conditions, and VSAT larger than 340 mV. 1. TA = +60 C 2. The average output voltage of G signal under uniform illumination. The standard exposure conditions are defined as w...
Description 1/2.7-type Interline Color CCD Area Sensor with 1 310 k Pixels

File Size 119.57K  /  15 Page

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