f-370-34 pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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f-370-34 Datasheet PDF File

For f-370-34 Found Datasheets File :: 2375 Search Time::1.266ms
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				STMICROELECTRONICS[STMicroelectronics]
Part No.	STA500
OCR Text	...45 5 2 Vcc=30V Rl=80hm f=1KHz 40 35 1 30 STA500 4 ohm load filter 22uH+ 0.47uF diff+ 0.1uF common mode THD = 10% ...370 0.547 inch TYP. MAX. 0.141 0.012 0.130 0.004 0.015 0.012 0.630 0.385 0.570 OUTLINE AND ...
Description	30V 3.5A QUAD POWER HALF BRIDGE
File Size	200.10K / 10 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SC5534
OCR Text	...es * Low noise : NF=1.2dB typ (f=2GHz). * High gain : S21e2=10dB typ (f=2GHz). * High cutoff frequency : fT=13GHz typ. Package Dimension...370 0.357 0.348 0.342 0.341 0.338 S11 -33.6 -60.8 -102.8 -126.6 -144.9 -160.0 -170.5 -179.9 171.6 1...
Description	NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications NPN Epitaxial Planar Silicon Transistors
File Size	43.50K / 5 Page	View it Online	Download Datasheet

				Vishay Telefunken VISAY[Vishay Siliconix]
Part No.	BFR96TS
OCR Text	...ditions VCE = 10 V, IC = 70 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 10 V, IC = 70 mA, ZS = ...370 0.395 0.396 0.395 0.389 0.386 0.373 0.363 0.348 0.374 0.397 0.399 0.398 0.394 0.389 0.378 0.368 ...
Description	From old datasheet system Silicon NPN Planar RF Transistor
File Size	128.62K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBC30S IRFBC30L
OCR Text	... 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.1...
Description	600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
File Size	358.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP22N60K
OCR Text	... IRFP22N60K 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd =C +C ds gd 20 ID= 22A VGS , Gate-to-Source Voltage (V) 16 10000 VDS= 480V VDS= 300V VDS= 120V C, Capacitance (pF) Ciss 1000 ...
Description	SMPS MOSFET MOSFET的开关电
File Size	169.46K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFP23N50L
OCR Text	... IRFP23N50L 100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 12 ID = 23 10 10000 V DS = 400V V DS = 250V V DS = 100V C, Capacitance(pF) Ciss 1000 VGS, Gate-to-Source Volta...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 0.190ohm，身份证\u003d 23A条）
File Size	102.63K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLR8103V
OCR Text	...VDS= 16V, VGS = 0V, IF = 15A f f Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400...370) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018)...
Description	N-Channel Application-Specific MOSFETs
File Size	148.37K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MHL19926
OCR Text	...yp * Power Gain: 29.4 dB Typ (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Stati...370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 ...
Description	PCS Band RF Linear LDMOS Amplifier
File Size	233.26K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD15N06
OCR Text	... on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 7.5 A VG S = 0 Min. 3 Typ. 5 550 230 80 700 290 100 Max. Unit S pF pF pF 2/10 STD15N06 ...370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.03...
Description	N-CHANNEL POWER MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	167.17K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	BZV47C10 BZV47C100 BZV47C12 BZV47C15 BZV47C150 BZV47C18 BZV47C20 BZV47C200 BZV47C22 BZV47C24 BZV47C27 BZV47C30 BZV47C36 BZV47C39 BZV47C47 BZV47C5V1 BZV47C5V200 BZV47C5V6 BZV47C68 BZV47C6V2 BZV47C7V5
OCR Text	...drop : VF 1.2 V (Tamb = 25C, I F = 500mA) Fig. 1 : Power dissipation versus ambient temperature. Fig. 2 :Thermal resistance versus lead length. 2/4 (R) BZV47C5V1 / BZV47C200 Fig. 3 : Relative variation of thermal impedance ...
Description	2W ZENER DIODES ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% surface mount silicon Zener diodes 表面贴装硅稳压二极管
File Size	60.09K / 4 Page	View it Online	Download Datasheet

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