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free-wheel Datasheet PDF File

For free-wheel Found Datasheets File :: 2087 Search Time::1.5ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM1000HA-24H
OCR Text	...se-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Sup...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	48.69K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200TU-12H09
OCR Text	...nti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is sho...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	108.76K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200TU-12F09
OCR Text	...nti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C....
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	131.01K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
Part No.	CM200RL-12NF09 CM200RL-12NF-09
OCR Text	...nti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C....
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	103.28K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24NFH09 CM200DU-24NFH
OCR Text	...nti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C....
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	97.31K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24H09
OCR Text	...nti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is sho...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	76.45K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24F09
OCR Text	...nti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C....
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	124.22K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-12NFH09
OCR Text	...nti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C....
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	113.32K / 4 Page	View it Online	Download Datasheet

For free-wheel Found Datasheets File :: 2087 Search Time::1.5ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |