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For idss. Found Datasheets File :: 28720    Search Time::2.234ms    
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    EFA018A

Excelics Semiconductor, Inc.
Part No. EFA018A
OCR Text ... linearity and reliability idss sorted in 5ma per bin range electrical characteristics (t a = 25 o c) symbols parameters/test conditions min typ max unit p 1db output power at 1db compression f=12ghz vds=6v, ids=50% idss f=...
Description Low Distortion GaAs Power FET

File Size 99.47K  /  2 Page

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    2N5484 2N5486

ONSEMI[ON Semiconductor]
Part No. 2N5484 2N5486
OCR Text ... 15 Vdc, VGS = 0) 2N5484 2N5486 IDSS 1.0 8.0 -- -- 5.0 20 mAdc SMALL- SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, ...
Description JFET VHF/UHF Amplifiers

File Size 276.41K  /  8 Page

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    Execlics
Part No. EFA080A-100F
OCR Text ... f=12ghz vds=8v, ids=50% idss 24.0 26.0 dbm g 1db gain at 1db compression f=12ghz vds=8v, ids=50% idss 6.0 7.5 db pae power added eff...
Description Low Distortion GaAs Power FET

File Size 55.71K  /  2 Page

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    EMA303D-2

Excelics Semiconductor, Inc.
Part No. EMA303D-2
OCR Text ...ssion @ vdd= 8v ; id= 0.5 idss @ vdd=6v ; id= 0.5 idss 21.5 19.5 2 3 2 1 dbm g ss small signal gain @ vdd=6v ; id= 0.5 idss 20 22 d b d d gss small signal gain flatness 1 .5 db nf ...
Description 19.5 - 24 GHz Medium Power MMIC

File Size 150.29K  /  4 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. FLC257MH-6
OCR Text ...tput Power at 1dB G.C.P. Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 6.4 GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =600mA VDS = 5V, IDS =50mA IGS = -50A Min. -1.0 -5 32.5 8.0 Lim...
Description C-Band Power GaAs FET

File Size 87.76K  /  4 Page

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    Micross Components
Part No. LSK170ASOT-23 LSK170ATO-92 LSK170BSOT-23 LSK170BTO-92 LSK170CSOT-23 LSK170CTO-92
OCR Text ...equency with a narrow range of idss and low capacitance. the 2sk170 / lsk170?s low noise to capacitance ratio and narrow range of low value idss provide solutions for low noise applications which cannot tolerate high values of capacitan...
Description an Ultra Low Noise Single N-Channel JFET

File Size 466.41K  /  1 Page

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    FH101

TriQuint Semiconductor
Part No. FH101
OCR Text ... max saturated drain current, idss (2) ma 100 140 170 transconductance, gm ms 120 pinch-off voltage, vp (3) v -3 -1.5 rf parameter units min typ max operational bandwidth mhz 50 ? 4000 test frequency mhz...
Description GaAs MESFET

File Size 355.45K  /  7 Page

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    EMP112

Excelics Semiconductor, Inc.
Part No. EMP112
OCR Text ...h tone pout 20dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -5 db idss saturated drain current vds =3v, v gs =0v 980 1140 1350 ma vds drain to source...
Description 5.0 - 7.2 GHz Power Amplifier MMIC

File Size 208.95K  /  3 Page

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    EMP111

Excelics Semiconductor, Inc.
Part No. EMP111
OCR Text ... tone pout 17dbm, 7v, 60%+ 10%idss -41 -38 dbc input rl input return loss -12 -8 db output rl output return loss -6 db idss saturated drain current vds =3v, v gs =0v 475 620 750 ma vds drain to ...
Description 7.0 - 9.0 GHz Power Amplifier MMIC

File Size 198.43K  /  3 Page

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    MMBFU310LT1_D MMBFU310LT1 MMBFU310L ON2106

MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
Motorola, Inc
Part No. MMBFU310LT1_D MMBFU310LT1 MMBFU310L ON2106
OCR Text ...Voltage (IG = 10 mAdc, VDS = 0) IDSS VGS(f) 24 -- 60 1.0 mAdc Vdc SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capac...
Description Motorola Preferred Device
JFET Transistor
From old datasheet system

File Size 160.00K  /  6 Page

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