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GSI Technology, Inc.
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Part No. |
GS8640FZ18GT-7.5IVT GS8640FZ18GT-7.5VT
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OCR Text |
... other flow through read/single late write srams, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. because it is a synchronous dev... |
Description |
4M X 18 ZBT SRAM, 7.5 ns, PQFP100 ROHS COMPLIANT, TQFP-100
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File Size |
372.22K /
19 Page |
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it Online |
Download Datasheet
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TM Technology, Inc. TMT[Taiwan Memory Technology]
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Part No. |
T221160A-35S T221160A-30J T221160A T221160A-30S T221160A-35J
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OCR Text |
...rictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycles only. If tWCS tWCS(min), the cycle is an EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. If tRWD tRWD(min), tAWD tAWD(... |
Description |
64K x 16 DYNAMIC RAM FAST PAGE MODE 64K的16动态RAM快速页面模
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File Size |
131.74K /
14 Page |
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it Online |
Download Datasheet
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Price and Availability
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