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NXP Semiconductors N.V. Philips
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Part No. |
PHN210T PHN210T_1
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Description |
transistor | MOSFET | MATCHED PAIR | n-channel | 27V V(BR)DSS | 3.4A I(D) | SO 晶体管| MOSFET | MATCHED PAIR | n-channel | 27V V(BR)DSS | 3.4A I(D) | SO封装 Dual n-channel enhancement mode trenchmos(TM) transistor From old datasheet system
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File Size |
83.71K /
7 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors] http://
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Part No. |
PHP80N06T
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Description |
trenchmos transistor Standard level FET 75 A, 55 V, 0.014 ohm, n-channel, Si, POWER, MOSFET, TO-220AB
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File Size |
65.55K /
8 Page |
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it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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Part No. |
2N7002F215
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Description |
n-channel enhancement mode Field-Effect transistor (FET) in a plastic package using trenchmos technology.
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File Size |
86.33K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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