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  non-volatile low Datasheet PDF File

For non-volatile low Found Datasheets File :: 5224    Search Time::1.828ms    
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    M50LPW080 M50LPW080K M50LPW080K1T M50LPW080K5T M50LPW080N M50LPW080N1T M50LPW080N5T

STMicroelectronics
Part No. M50LPW080 M50LPW080K M50LPW080K1T M50LPW080K5T M50LPW080N M50LPW080N1T M50LPW080N5T
OCR Text ... M50LPW080 is a 8 Mbit (1Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an o...
Description 8 Mbit 1Mb x8, Uniform Block 3V Supply low Pin Count Flash Memory

File Size 270.07K  /  36 Page

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    MBM30LV0032 MBM30LV0032-PFTN MBM30LV0032-PFTR

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MBM30LV0032 MBM30LV0032-PFTN MBM30LV0032-PFTR
OCR Text ...for applications requiring mass non-volatile storage such as solid state file storage, digital recording, image file memory for still cameras, and other uses which require high density and non-volatile storage. s PRODUCT LINE UP Part No...
Description FLASH MEMORY 32M (4M x 8) BIT NAND-type

File Size 286.17K  /  42 Page

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    MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR

Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
Part No. MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR
OCR Text ... which require high density and non-volatile storage. s PRODUCT LINE UP Part No. Operating Temperature VCC Read Power Dissipation (Max.) Erase / Program TTL Standby CMOS Standby MBM30LV0064 -40C to +85C +2.7 V to +3.6 V 72 mW 72 mW 3.6 ...
Description FLASH MEMORY 64M (8M x 8) BIT NAND-type

File Size 280.47K  /  43 Page

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    NVM3060

ETC[ETC]
Part No. NVM3060
OCR Text ...ded for use as a reprogrammable non-volatile memory in conjunction with the CCU 2030/2050/2070/3000 series Central Control Units or the SAA 12xx and TVPO 2066 Remote Control and Tuning ICs. It serves for storing the tuning information as we...
Description 4096-Bit EEPROM

File Size 157.45K  /  13 Page

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    TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58DVM82A1FT00 TC58DVM72A TC58DVM82F1FT00 TC58DAM72F1FT00 TC58DAM82A1FT00

TOSHIBA[Toshiba Semiconductor]
Part No. TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58DVM82A1FT00 TC58DVM72A TC58DVM82F1FT00 TC58DAM72F1FT00 TC58DAM82A1FT00 TC58DAM72A1FT00 TC58DAM82F1FT00 TC58DVM72A1FT TC58DVM72F1FT TC58DVMXXX
OCR Text ...tems which require high-density non-volatile memory data storage. FEATURES Organization TC58DxM72A1xxxx Memory cell allay 528 32K 8 Register 528 8 Page size 528 bytes Block size (16K 512) bytes Modes Read, Reset, Auto Page Program Auto ...
Description Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

File Size 364.95K  /  34 Page

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    U634H256 U634H256D1A25 U634H256D1A25G1 U634H256D1A35 U634H256D1A35G1 U634H256D1A45 U634H256D1A45G1 U634H256D1C25 U634H25

Zentrum Mikroelektronik...
ZMD
Zentrum Mikroelektronik Dresden GmbH
ETC[ETC]
Zentrum Mikroelektronik Dresden AG
Electronic Theatre Controls, Inc.
Part No. U634H256 U634H256D1A25 U634H256D1A25G1 U634H256D1A35 U634H256D1A35G1 U634H256D1A45 U634H256D1A45G1 U634H256D1C25 U634H256D1C25G1 U634H256D1C35 U634H256D1C35G1 U634H256D1C45 U634H256D1C45G1 U634H256D1K25 U634H256D1K25G1 U634H256D1K35 U634H256D1K35G1 U634H256D1K45 U634H256D1K45G1 U634H256D1M25 U634H256D1M25G1 U634H256D1M35 U634H256D1M35G1 U634H256D1M45 U634H256D1M45G1 U634H256SA25 U634H256SA25G1 U634H256SA35 U634H256SA35G1 U634H256SA45 U634H256SA45G1 U634H256SC25 U634H256SC25G1 U634H256SC35 U634H256SC35G1 U634H256SC45 U634H256SC45G1 U634H256SK25 U634H256SK25G1 U634H256SK35 U634H256SK35G1 U634H256SK45 U634H256SK45G1 U634H256SM25 U634H256SM25G1 U634H256SM35 U634H256SM35G1 U634H256SM45 U634H256SM45G1
OCR Text non! ! ! ! Description The U634H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operate...volatile static RAM 32768 x 8 bits 25, 35 and 45 ns Access Times 10, 15 and 20 ns Output Enable Acce...
Description POWERSTORE 32K X 8 NVSRAM POWERSTORE 32K的8非易失性SRAM

File Size 243.35K  /  14 Page

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    ATTINY13 ATTINY13-12PI ATTINY13-12PJ ATTINY13-12SI ATTINY13-12SJ ATTINY13-12SSJ ATTINY13-24PI ATTINY13-24PJ ATTINY13-24S

ATMEL[ATMEL Corporation]
Part No. ATTINY13 ATTINY13-12PI ATTINY13-12PJ ATTINY13-12SI ATTINY13-12SJ ATTINY13-12SSJ ATTINY13-24PI ATTINY13-24PJ ATTINY13-24SI ATTINY13-24SJ ATTINY13-24SSI ATTINY13-24SSJ ATTINY13-12SSI
OCR Text ...isters - Fully Static Operation non-volatile Program and Data Memories - 1K Byte of In-System Programmable Program Memory Flash Endurance: 10,000 Write/Erase Cycles - 64 Bytes In-System Programmable EEPROM Endurance: 100,000 Write/Erase Cyc...
Description 8-bit AVR Microcontroller with 1K Bytes In-System Programmable Flash

File Size 1,219.15K  /  169 Page

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    ATTINY2313-16MI ATTINY2313-16MJ ATTINY2313-16PI ATTINY2313-16SI ATTINY2313-16SJ ATTINY2313V-8MI ATTINY2313V-8MJ ATTINY23

ATMEL[ATMEL Corporation]
Part No. ATTINY2313-16MI ATTINY2313-16MJ ATTINY2313-16PI ATTINY2313-16SI ATTINY2313-16SJ ATTINY2313V-8MI ATTINY2313V-8MJ ATTINY2313V-8PI ATTINY2313V-8PJ ATTINY2313V-8SI ATTINY2313V-8SJ ATTINY2313NBSP ATTINY2313 ATTINY2313-16PJ
OCR Text ...Fully Static Operation Data and non-volatile Program and Data Memories - 2K Bytes of In-System Self Programmable Flash Endurance 10,000 Write/Erase Cycles - 128 Bytes In-System Programmable EEPROM Endurance: 100,000 Write/Erase Cycles - 128...
Description 8-bit AVR Microcontroller with 2K Bytes In-System Programmable Flash

File Size 1,510.64K  /  211 Page

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    ATTINY26 ATTINY26-16MC ATTINY26-16MI ATTINY26-16PC ATTINY26-16PI ATTINY26-16SC ATTINY26-16SI ATTINY26L ATTINY26L-8MC ATT

ATMEL[ATMEL Corporation]
Atmel Corp.
Part No. ATTINY26 ATTINY26-16MC ATTINY26-16MI ATTINY26-16PC ATTINY26-16PI ATTINY26-16SC ATTINY26-16SI ATTINY26L ATTINY26L-8MC ATTINY26L-8MI ATTINY26L-8PC ATTINY26L-8PI ATTINY26L-8SC ATTINY26L-8SI ATTINY26-1 ATTINY26LB-8BMC
OCR Text ...S Throughput at 16 MHz Data and non-volatile Program Memory - 2K Bytes of In-System Programmable Program Memory Flash Endurance: 10,000 Write/Erase Cycles - 128 Bytes of In-System Programmable EEPROM Endurance: 100,000 Write/Erase Cycles - ...
Description    8-bit Microcontroller with 2K Bytes Flash
2K Flash Program Memory, 160 Bytes SRAM, 128 Bytes EEPROM, 11 Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 8 MIPS throughput at 8 MHz. 3-volt operation
2K Flash Program Memory, 128 Bytes SRAM, 128-Byte EEPROM, 11-Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 16 MIPS throughput at 16 MHz
75 1% 1/16W 0402

File Size 119.99K  /  16 Page

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    M28W160BTT100GB1T M28W160BTT100GB6T M28W160BTT100N1T M28W160BTT100N6T M28W160BTB90GB1T M28W160BTB90GB6T M28W160BTB90N1T

SGS Thomson Microelectronics
STMicroelectronics
ST Microelectronics
Part No. M28W160BTT100GB1T M28W160BTT100GB6T M28W160BTT100N1T M28W160BTT100N6T M28W160BTB90GB1T M28W160BTB90GB6T M28W160BTB90N1T M28W160BTB90N6T M28W160B-GBT M28W160BTT90N1T M28W160BTT90N6T M28W160BTT90GB1T M28W160BTT90GB6T M28W160BB
OCR Text ...PTION The M28W160B is a 16 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-byWord basis. The device is offered in the TSOP48 (10 x 20mm) and the BGA46, 0.75mm ball pitch p...
Description 16 Mbit (1Mb x16, Boot Block) low Voltage Flash Memory
16 Mbit 1Mb x16, Boot Block low Voltage Flash Memory
16 Mbit 1Mb x16/ Boot Block low Voltage Flash Memory

File Size 276.86K  /  39 Page

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