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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KBE00S009M-D411 KBE00S009M-D4110
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OCR Text |
... - changed operating voltage : page 3 <nand flash> .... ver 0.2 - changed the technical note : page 15,16 - finalize draft date ...burst length (1, 2, 4, 8 & full page). -. burst type (sequential & interleave). ? emrs cycle w... |
Description |
1Gb NAND x 2 256Mb Mobile SDRAM x 2 SPECIALTY MEMORY CIRCUIT, PBGA137
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File Size |
1,908.72K /
86 Page |
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it Online |
Download Datasheet |
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Etron Tech
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Part No. |
EM636165TS
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OCR Text |
...st length: 1, 2, 4, 8, or full page - burst type: interleaved or linear burst - burst stop function ? individual byte controlled by ldqm and udqm ? auto refresh and self refresh ? 4096 refresh cycles/64ms ? cke power do... |
Description |
1M x 16 Synchronous DRAM
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File Size |
770.51K /
74 Page |
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it Online |
Download Datasheet |
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http://
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Part No. |
HM5264405FTT-75 HM5264805FTT-75
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OCR Text |
...ble burst length: 1/2/4/8/full page 2 variations of burst sequence ? sequential (bl = 1/2/4/8/full page) ? interleave (bl = 1/2/4/8)
hm5264165f/hm5264805f/hm5264405f-75/a60/b60 2 programmable cas latency: 2/3 byte control by ... |
Description |
64M LVTTL interface SDRAM 133 MHz/100 MHz
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File Size |
875.10K /
67 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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Part No. |
KBE00S003M KBE00S003M-D411
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OCR Text |
... - changed operating voltage : page 3 <nand flash> .... ver 0.2 - changed the technical note : page 15,16 <mobile sdram> .... ver 1.1 - ...burst length (1, 2, 4, 8 & full page). -. burst type (sequential & interleave). ? emrs cycle w... |
Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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File Size |
1,809.86K /
86 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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