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  rg-174 Datasheet PDF File

For rg-174 Found Datasheets File :: 577    Search Time::1.687ms    
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    SG50N06DS SG50N06S

Sirectifier Global Corp.
Sirectifier Semiconductors
Part No. SG50N06DS SG50N06S
OCR Text ...A A W o VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Terminal connection torque(M4) C ...
Description Discrete IGBTs

File Size 154.07K  /  2 Page

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    APT20GT60BRDQ1 APT20GT60BRDQ1G

Advanced Power Technology
Part No. APT20GT60BRDQ1 APT20GT60BRDQ1G
OCR Text ... VCC = 400V VGE = 15V I C = 20A RG = 5 Turn-on Switching Energy (Diode) 6 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V I C = 20A RG = 5 J Turn-on Switching Energy (Diode) 6 TJ = +125C THERMAL AND MECHANICAL ...
Description Thunderbolt IGBT

File Size 426.11K  /  9 Page

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    IXYS[IXYS Corporation]
Part No. IXDN55N120D1 IXDN55N120
OCR Text ...p = 1 ms VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = VCES, TJ = 125C RG = 22 W, non repetitive TC = ...174 0.191 0.987 0.004 0.180 21.08 miniBLOC, SOT-227 B Cies Coes Cres Qg td(on) tr td(off) tf E...
Description IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode

File Size 71.53K  /  4 Page

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    IXFNB24N100 IXFNB24N100F IXFN24N100 IXFN24N100F

IXYS, Corp.
IXYS Corporation
Part No. IXFNB24N100 IXFNB24N100F IXFN24N100 IXFN24N100F
OCR Text ...he Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr D trr 250 ns G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/...174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Q...
Description HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
HiPerRF Power MOSFETs F-Class: MegaHertz Switching

File Size 103.89K  /  2 Page

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    TA3020

TRIPATH[Tripath Technology Inc.]
ETC
Part No. TA3020
OCR Text ...S1HN 40 VBOOT1 + RS 0.01, 1W RG QO CS 330uF VPP INV1 25 ROFB 499K AGND 5.6, 1W 45 HO1 46 HO1COM CBAUX 47uF Processing & Modulation VN10 48 LO1 47 LO1COM 42 OCS1LP 41 OCS1LN 37 OCR1 33 OCR1 COCR 220pF RG QO ...
Description Stereo 300W (4з) Class-T Digital Audio Amplifier Driver using Digital Power ProcessingTM Technology
Stereo 300W (4) Class-T Digital Audio Amplifier Driver using Digital Power ProcessingTM Technology

File Size 282.58K  /  29 Page

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    BB305M BB305MEW-TL-E

Renesas Electronics Corporation
Part No. BB305M BB305MEW-TL-E
OCR Text ...VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 82 k f = 1 MHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 82 k VDS = 9 V, VG1 = 9 V, VG2S = 6 V RG = 220 k V...174.9 169.3 163.4 157.5 152.0 146.3 140.9 135.7 130.5 125.7 120.8 116.2 111.5 106.8 102.5 98.4 94.0 ...
Description Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

File Size 203.73K  /  10 Page

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    2SK2529

Hitachi Semiconductor
Fuji Electric
Part No. 2SK2529
OCR Text ...Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 20 50 200 50 45 174 35 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg 2 2SK2529 Electrical Characterist...
Description SILICON N-CHANNEL MOS FET

File Size 50.24K  /  10 Page

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    BB305C BB305CEW-TL-E

Renesas Electronics Corporation
Part No. BB305C BB305CEW-TL-E
OCR Text ...DS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 82 k, f = 1 MHz VDS = 5 V, VG1 = 5 V, VG2S = 4 V, RG = 82 k VDS = 9 V, VG1 = 9 V, VG2S = 6 V, RG = 220 ...174.9 169.3 163.4 157.5 152.0 146.3 140.9 135.7 130.5 125.7 120.8 116.2 111.5 106.8 102.5 98.4 94.0 ...
Description Built in Biasing Circuit MOS FET IC VHF RF Amplifier

File Size 204.92K  /  10 Page

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    FDB024N06

Fairchild Semiconductor
Part No. FDB024N06
OCR Text ... = 0.9mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristic...
Description N-Channel PowerTrench? MOSFET 60V, 265A, 2.4mΩ
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.4mヘ

File Size 572.48K  /  8 Page

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    2SK2586-E 2SK2586

http://
Renesas Electronics Corporation
Part No. 2SK2586-E 2SK2586
OCR Text ...Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID*2 ID(pulse)*1 IDR*2 IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 20 60 240 60 45 174 125 150 -55 to +150 Unit V V A A A A mJ W C C Electrical Characteristics (Ta = 25C) Item Drain...
Description Silicon N Channel MOS FET

File Size 82.67K  /  8 Page

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For rg-174 Found Datasheets File :: 577    Search Time::1.687ms    
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