| |
|
 |
Panasonic Semiconductor
|
| Part No. |
2SC5829
|
| OCR Text |
...ure Symbol ICBO IEBO hFE fT Cob s21e2 GUM NF Conditions VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0... |
| Description |
From old datasheet system
For High Speed Switching
|
| File Size |
61.36K /
3 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
panasonic
|
| Part No. |
2SC5295J
|
| OCR Text |
...
Symbol ICBO IEBO hFE fT Cob s21e2 GUM NF
Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 15 mA, f = 1.5 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 15 mA, f = 1.5 GHz VCE = 8 V, IC = 15 mA,... |
| Description |
SSMini3-F1
|
| File Size |
66.78K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
NEC[NEC]
NEC Corp.
|
| Part No. |
2SC4703 2SC4703NE46234 2SC4703SH
|
| OCR Text |
...ain SYMBOL ICBO IEBO hFE fT Cob s21e2 6.5 50 6.0 1.5 8.3 8.5 Noise Figure 2nd Order Intermoduration Distortion 3rd Order Intermoduration Distortion IM3 NF IM2 2.3 3.5 dB dB 2.5 MIN. TYP. MAX. 1.5 1.5 250 GHz pF dB UNIT TEST CONDITIONS VCB =... |
| Description |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
BJT
|
| File Size |
64.23K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Sanyo
|
| Part No. |
2SC5228
|
| OCR Text |
...0dB typ (f=1GHz). * High gain : s21e2=13.5dB typ (f=1GHz). * High cutoff frequency : fT=7GHz typ.
Package Dimensions
unit:mm 2110A
1.9 0.95 0.95
0.5
[2SC5228]
0.4 4 3
0.16 0 to 0.1
1
2 0.6
0.5
0.95 0.85 2.9
1.5
... |
| Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
| File Size |
127.57K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Sanyo
|
| Part No. |
2SC5227
|
| OCR Text |
...0dB typ (f=1GHz). * High gain : s21e2=12dB typ (f=1GHz). * High cutoff frequency : fT=7GHz typ.
Package Dimensions
unit:mm 2018B
[2SC5227]
0.5
0.4 3 0.16
0 to 0.1
0.5
1
0.95 0.95 2 1.9 2.9
1.5
2.5
Specifications
... |
| Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
| File Size |
126.29K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
