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For screwing Found Datasheets File :: 585    Search Time::1.016ms    
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    CM1000E4C-66R

Mitsubishi Electric Semiconductor
Part No. CM1000E4C-66R
OCR Text ... 61.5 0.3 13 0.3 61.5 0.3 screwing DEPTH MIN 7.7 screwing DEPTH MIN 16.5 Mar. 2009 1 PRE . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som ARY LIMIN MITSUBISHI HVIGBT...
Description HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 108.23K  /  8 Page

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    CM800E6C-66H

Mitsubishi Electric Semiconductor
Part No. CM800E6C-66H
OCR Text ...61.5 0.3 13 0.2 5 0.15 38 +1 0 screwing depth min. 16.5 8 - 7 0.1 MOUNTING HOLES 15 0.2 40 0.3 5.2 0.2 29.5 0.5 screwing depth min. 7.7 28 +1 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul....
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 65.23K  /  7 Page

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    CM800HC-66H

Mitsubishi Electric Semiconductor
Part No. CM800HC-66H
OCR Text ... 70.1MOUNTING HOLES 61.50.3 screwing depth min. 7.7 screwing depth min. 16.5 150.2 400.3 5.20.2 180.2 50.15 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 29.50.5 38 +1 0 28 +1 0 Jul....
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 63.20K  /  7 Page

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    CM1800HC-34N CM1800HC-34N09

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. CM1800HC-34N CM1800HC-34N09
OCR Text ...- 7 MOUNTING HOLES 61.50.3 screwing depth min. 7.7 screwing depth min. 16.5 150.2 400.2 5.20.2 180.2 38 +1 -0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.50.5 50.2 28...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 56.13K  /  6 Page

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    CM1800HC-34H05 CM1800HC-34H09 CM1800HC-34H

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. CM1800HC-34H05 CM1800HC-34H09 CM1800HC-34H
OCR Text ... 3 - M4 NUTS 79.4 0.3 61.5 0.3 screwing depth min. 7.7 8 - 7 0.1 MOUNTING HOLES screwing depth min. 16.5 61.5 0.3 13 0.2 15 0.2 40 0.3 5.2 0.2 5 0.15 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 64.03K  /  6 Page

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    CM1200HG-66H

POWEREX INC
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM1200HG-66H
OCR Text ...- 7 MOUNTING HOLES 61.20.5 screwing depth min. 7.7 61.20.5 120.3 screwing depth min. 16.5 180.3 410.5 220.3 48 +1.0 0 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 40.40.3 LABEL 38 ...
Description 1200 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 63.95K  /  7 Page

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    CM1200HC-66H CM1200HC-66H05 CM1200HC-66H09

Mitsubishi Electric Semiconductor
Part No. CM1200HC-66H CM1200HC-66H05 CM1200HC-66H09
OCR Text ... 3 - M4 NUTS 79.4 0.3 61.5 0.3 screwing depth min. 7.7 8 - 7 0.1 MOUNTING HOLES screwing depth min. 16.5 61.5 0.3 13 0.2 15 0.2 40 0.3 5.2 0.2 5 0.15 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 66.81K  /  7 Page

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    CM1200HC-50H CM1200HC-50H09

Mitsubishi Electric Semiconductor
Part No. CM1200HC-50H CM1200HC-50H09
OCR Text ... 3 - M4 NUTS 79.4 0.3 61.5 0.3 screwing depth min. 7.7 8 - 7 0.1 MOUNTING HOLES screwing depth min. 16.5 61.5 0.3 13 0.2 15 0.2 40 0.3 5.2 0.2 5 0.15 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 66.74K  /  7 Page

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    CM1200HC-34H

Mitsubishi Electric Semiconductor
Part No. CM1200HC-34H
OCR Text ...16.5 3 - M4 NUTS 2.5 18.5 61.5 screwing depth min. 7.7 6 - 7 MOUNTING HOLES 5 screwing depth min. 11.7 35 11 14.5 18 38 +1 0 28 +1 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 31.5 5 ...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 61.96K  /  6 Page

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    CM1200DB-34N

Mitsubishi Electric Semiconductor
Part No. CM1200DB-34N
OCR Text ...- 7 MOUNTING HOLES 55.20.3 screwing depth min. 7.7 11.850.2 screwing depth min. 16.5 50.2 350.2 11.50.2 140.2 38 +1 -0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.50.5 5...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 58.25K  /  6 Page

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For screwing Found Datasheets File :: 585    Search Time::1.016ms    
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