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  tcc Datasheet PDF File

For tcc Found Datasheets File :: 1189    Search Time::2.047ms    
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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M366S3253BTS-C75
OCR Text ...condition version unit note -75 tcc=7.5ns tcc=10ns operating current (one bank active) i cc1 burst length =1 t rc 3 t rc (min) i o = 0 ma 960 880 ma 1 precharge standby current in power-down mode i cc2 p cke v il (max), t cc = 10ns ...
Description 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD

File Size 105.26K  /  10 Page

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    K4S160822D K4S160822DT-G_FL K4S160822DT-G_F10 K4S160822DT-G_F7 K4S160822DT-G_F8 K4S160822DT-G_FH K4S160822DT-G/F8 K4S160

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S160822D K4S160822DT-G_FL K4S160822DT-G_F10 K4S160822DT-G_F7 K4S160822DT-G_F8 K4S160822DT-G_FH K4S160822DT-G/F8 K4S160822DT-G/F10 K4S160822DT-G/FH K4S160822DT-G/F7 K4S160822DT-G/FL
OCR Text ...C(min) Io = 0 mA CKE VIL(max), tcc = 15ns CKE & CLK VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 15ns Input signals are changed one time during 30ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc =...
Description 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL

File Size 1,178.64K  /  46 Page

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    KM432S2030C KM432S2030CT-F10 KM432S2030CT-F6 KM432S2030CT-F7 KM432S2030CT-F8 KM432S2030CT-G10 KM432S2030CT-G6 KM432S2030

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM432S2030C KM432S2030CT-F10 KM432S2030CT-F6 KM432S2030CT-F7 KM432S2030CT-F8 KM432S2030CT-G10 KM432S2030CT-G6 KM432S2030CT-G7 KM432S2030CT-G8
OCR Text ...(min) IOL = 0 mA CKE VIL(max), tcc = 15ns CAS Latency 3 2 Version Unit Note -6 140 -7 130 2 mA 2 20 10 3 mA 3 30 20 3 2 3 2 200 200 180 180 2 450 150 130 160 160 130 mA 110 150 mA 150 mA uA 3 4 2 1 mA mA mA mA -8 130 130 -10 115 mA 115 1 ...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,159.01K  /  43 Page

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    K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_L60 K4S161622D-TC_L70 K4S161622D-TC_L80

Samsung semiconductor
Part No. K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_L60 K4S161622D-TC_L70 K4S161622D-TC_L80
OCR Text ...tRC(min) Io = 0 mA CKEVIL(max), tcc = 15ns CKE & CLKVIL(max), tcc = CKEVIH(min), CSVIH(min), tcc = 15ns Input signals are changed one time during 30ns CKEVIH(min), CLKVIL(max), tcc = Input signals are stable CKEVIL(max), tcc = 15ns CKE & ...
Description 512K x 16Bit x 2 Banks Synchronous DRAM

File Size 746.48K  /  41 Page

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    K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S641633H-F75 K4S641633H-G K4S641633H-L K4S641633H-N K4S641633H-R K4S641633H

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S641633H-C K4S641633H-F1H K4S641633H-F1L K4S641633H-F75 K4S641633H-G K4S641633H-L K4S641633H-N K4S641633H-R K4S641633H-RBE K4S641633H-RE K4S641633H-RL1L0
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns -1H -1L Unit Note ICC1 60 55 55 mA 1 ICC2P 0.5 mA 0.5 11 mA 8 5 mA 5 22 mA ICC2PS CKE & CLK VIL(max), tcc = ICC2N CKE VIH(min), CS VIH(min), tcc = 10ns Input signals ...
Description 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM

File Size 110.06K  /  12 Page

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    KM48S16030AT-G_F8 KM48S16030AT-G_FH KM48S16030AT-G_FL

Samsung semiconductor
Part No. KM48S16030AT-G_F8 KM48S16030AT-G_FH KM48S16030AT-G_FL
OCR Text ...CC3N ICC4 Before CKE VIL(max), tcc = 15ns CKE VIH(min), CS VIH(min), tcc = 15ns Input signals are changed one time during 30ns 2 Banks activated After CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are ch...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 91.30K  /  11 Page

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    KM48S16030BT-G_FA KM48S16030BT-G_FH KM48S16030BT-G_FL

Samsung semiconductor
Part No. KM48S16030BT-G_FA KM48S16030BT-G_FH KM48S16030BT-G_FL
OCR Text ...CC3N ICC4 Before CKE VIL(max), tcc = 15ns CKE VIH(min), CS VIH(min), tcc = 15ns Input signals are changed one time during 30ns 2 Banks activated After CKE VIL(max), tcc = 10ns CKE VIH(min), CS VIH(min), tcc = 10ns Input signals are ch...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 89.50K  /  11 Page

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    KM48S16030T-G_FH

Samsung semiconductor
Part No. KM48S16030T-G_FH
OCR Text ...(min) IOL = 0 mA CKE VIL(max), tcc = 15ns CKE & CLK VIL(max), tcc = CKE VIH(min),CS VIH(min),tcc=15ns Input signals are changed one time during 30ns CKE VIH(min), CLK VIL(max), tcc = Input signals are stable CKE VIL(max), tcc = 15n...
Description 4M x 8Bit x 4 Banks Synchronous DRAM

File Size 77.34K  /  10 Page

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    AMP374P6453BT1-C1H AMP374P6453BT1-C1HS AMP374P6453BT1C1H

Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
Part No. AMP374P6453BT1-C1H AMP374P6453BT1-C1HS AMP374P6453BT1C1H
OCR Text ... (min) IOL = 0mA CKE VIL (max), tcc = 10ns CKE & CLK VIL (max), tcc = CKE VIH (min), CS VIH (min), tcc = 10ns Input signals are changed one time during 20ns CKE VIH (min), CLK VIL (max), tcc = Input signals are stable CKE VIL (max), tC...
Description 64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs

File Size 70.99K  /  12 Page

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For tcc Found Datasheets File :: 1189    Search Time::2.047ms    
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