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BAS38110 2SC4499S GP10NC60 NX8346TB 2812C RF107 BUL45D2G VRE120MA
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    GS74116ATJ

GSI Technology
Part No. GS74116ATJ
OCR Text ...oted. 3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ Rev: 1.03 10/2002 5/14 (c) 2001, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. ...
Description 256K x 16 4Mb Asynchronous SRAM

File Size 330.76K  /  14 Page

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    GS74108J GS74108TP

GSI Technology
Part No. GS74108J GS74108TP
OCR Text ...noted 3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ. Rev: 1.06 7/2000 5/12 (c) 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. ...
Description 512K x 8 4Mb Asynchronous SRAM

File Size 221.50K  /  12 Page

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    GS74108ATJ

GSI Technology
Part No. GS74108ATJ
OCR Text ...oted. 3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ AC Characteristics Read Cycle Parameter Read cycle time Address access time Chip enable access time (CE) Output enable to output valid (OE) Output hold from address change Chip enable t...
Description 512K x 8 4Mb Asynchronous SRAM

File Size 419.20K  /  13 Page

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    GS74104J GS74104TP

GSI Technology
Part No. GS74104J GS74104TP
OCR Text ...oted. 3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ Rev: 1.07 1/2001 5/12 (c) 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. ...
Description 1M x 4 4Mb Asynchronous SRAM

File Size 386.49K  /  12 Page

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    GS74104ATJ

GSI Technology
Part No. GS74104ATJ
OCR Text ...oted. 3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ AC Characteristics Read Cycle Parameter Read cycle time Address access time Chip enable access time (CE) Output enable to output valid (OE) Output hold from address change Chip enable t...
Description 1M x 4 4Mb Asynchronous SRAM

File Size 333.85K  /  11 Page

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    SP510CM SP510EM-L

Exar Corporation
Part No. SP510CM SP510EM-L
OCR Text ...mp Rise Time tR, tF tZL tZH tLZ tHZ tZL tZH tLZ tHZ tPHL, tPLH CL = 100 pF, Fig. 34 and 40, S1 closed CL = 100 pF, Fig. 34 and 40, S2 closed CL = 15 pF, Fig. 34 and 40, S1 closed CL = 15 pF, Fig. 34 and 40, S2 closed R_IN to R_OUT, CL = 15 ...
Description ULTRA HIGH SPEED MULTIPROTOCOL TRANSCEIVER

File Size 821.09K  /  37 Page

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    K6X0808C1D-TQ55 K6X0808C1D-GF55 K6X0808C1D-DF55 K6X0808C1D-F K6X0808C1D-GF70 K6X0808C1D-GQ70 K6X0808C1D-RF55 K6X0808C1D

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6X0808C1D-TQ55 K6X0808C1D-GF55 K6X0808C1D-DF55 K6X0808C1D-F K6X0808C1D-GF70 K6X0808C1D-GQ70 K6X0808C1D-RF55 K6X0808C1D K6X0808C1D-DF70 K6X0808C1D-GQ55 K6X0808C1D-Q K6X0808C1D-RF70 K6X0808C1D-TF55 K6X0808C1D-TF70 K6X0808C1D-TQ70
OCR Text ...0 - tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW 55 10 5 0 0 10 55 45 0 45 40 0 0 25 0 5 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns DATA RETENTION CHARACTERISTICS Item Vcc for dat...
Description 32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM

File Size 165.28K  /  9 Page

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    K6X1008C2D-TQ55 K6X1008C2D-BF55 K6X1008C2D-GF55 K6X1008C2D K6X1008C2D-B K6X1008C2D-BB70 K6X1008C2D-BF70 K6X1008C2D-DB70

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X1008C2D-TQ55 K6X1008C2D-BF55 K6X1008C2D-GF55 K6X1008C2D K6X1008C2D-B K6X1008C2D-BB70 K6X1008C2D-BF70 K6X1008C2D-DB70 K6X1008C2D-DF55 K6X1008C2D-DF70 K6X1008C2D-F K6X1008C2D-GB55 K6X1008C2D-GQ55 K6X1008C2D-GQ70 K6X1008C2D-PB55 K6X1008C2D-PF55 K6X1008C2D-Q K6X1008C2D-TB55 K6X1008C2D-TB70 K6X1008C2D-TF55 K6X1008C2D-TQ70 K6X1008C2D-BB55 K6X1008C2D-DB55 K6X1008C2D-GB70 K6X1008C2D-GF70 K6X1008C2D-PB70 K6X1008C2D-PF70 K6X1008C2D-TF70
OCR Text ... Low-Z tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW 55 10 5 0 0 10 55 45 0 45 40 0 0 20 0 5 55ns Max 55 55 25 20 20 20 Min 70 10 5 0 0 10 70 60 0 60 50 0 0 25 0 5 70ns Max 70 70 35 25 25 25 ns ns ns ns ns n...
Description 128Kx8 bit Low Power CMOS Static RAM 128Kx8位低功耗CMOS静态RAM

File Size 175.50K  /  10 Page

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    K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X401

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text ...e tRC tAA tCO tOE tLZ tOLZ tBLZ tHZ tOHZ tOH tBA tBHZ tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW tBW 55 10 5 5 0 0 10 0 55 45 0 45 45 0 0 25 0 5 45 55ns Max 55 55 25 20 20 25 20 20 Min 70 10 5 5 0 0 10 0 70 60 0 60 55 0 0 30 0 5 60 70ns Max 7...
Description 256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器

File Size 129.39K  /  9 Page

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