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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
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Description |
MOSFET; transistor Polarity:dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, dual NN POWERPAKMOSFET, dual NN POWERPAK; transistor type:MOSFET; transistor polarity:dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, dual, PP, POWERPAK; transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
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File Size |
125.39K /
17 Page |
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EPCOS AG
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Part No. |
2SK30A-R 2SK30A-Y 2N4303 2N3686A 2N5717 2N5718 2SK30A-O 2SK30A-GR 2SK19BL 2N4304
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Description |
transistor | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 Low-Power, Single-/dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset transistor | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-72 transistor | JFET | N-CHANNEL | 800UA I(DSS) | TO-92 transistor | JFET | N-CHANNEL | 30V V(BR)DSS | 15MA I(DSS) | TO-106 晶体管|场效应| N沟道| 30V的五(巴西)直| 15mA的我(直)|106
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File Size |
288.39K /
4 Page |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
RN2112FT RN2113FT
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Description |
IGBT Modules up to 600V dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines TOSHIBA transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in transistor)
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File Size |
72.56K /
3 Page |
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CENTRAL[Central Semiconductor Corp]
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Part No. |
CMLT2907A
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Description |
SMD Small Signal transistor dual PNP General Purpose Amplifier/Switc SURFACE MOUNT dual PNP SILICON transistorS SURFACE MOUNT dual PNP SILICON transistorS
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File Size |
94.37K /
2 Page |
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Price and Availability
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