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  transistor dual sot 143 5st Datasheet PDF File

For transistor dual sot 143 5st Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
Description MOSFET; transistor Polarity:dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, dual NN POWERPAKMOSFET, dual NN POWERPAK; transistor type:MOSFET; transistor polarity:dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, dual, PP, POWERPAK; transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM

File Size 125.39K  /  17 Page

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    NDH8321C

FAIRCHILD SEMICONDUCTOR CORP
Part No. NDH8321C
Description dual N & P-Channel Enhancement Mode Field Effect transistor(??娌????娌??澧?己??????绠?N娌??锛???垫?3.8A, 婕???靛?20V锛???????.035惟锛?娌??锛???垫?-2.7A, 婕???靛?-20V锛???????.07惟锛?
dual N & P-Channel Enhancement Mode Field Effect transistor

File Size 251.76K  /  12 Page

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    BSP17 Q67000-S220 BSP17Q67000-S220

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BSP17 Q67000-S220 BSP17Q67000-S220
Description transistor MOSFET SMD sot 223 N KANAL
INNOLINE: RP100-S_DI - Single Output up to 25A dual Outputs Total Power up to 100W- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage
SIPMOS Small-Signal transistor (N channel Enhancement mode Avalanche rated)
SIPMOS ? Small-Signal transistor
From old datasheet system

File Size 139.56K  /  9 Page

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    BC858CDXV6T1G

ON Semiconductor
Part No. BC858CDXV6T1G
Description General Purpose dual PNP transistor; Package: sot-563, 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 4000 100 mA, 30 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL transistor

File Size 53.11K  /  4 Page

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    EPCOS AG
Part No. 2SK30A-R 2SK30A-Y 2N4303 2N3686A 2N5717 2N5718 2SK30A-O 2SK30A-GR 2SK19BL 2N4304
Description transistor | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92
Low-Power, Single-/dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
transistor | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-72
transistor | JFET | N-CHANNEL | 800UA I(DSS) | TO-92
transistor | JFET | N-CHANNEL | 30V V(BR)DSS | 15MA I(DSS) | TO-106 晶体管|场效应| N沟道| 30V的五(巴西)直| 15mA的我(直)|106

File Size 288.39K  /  4 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. RN2112FT RN2113FT
Description IGBT Modules up to 600V dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in transistor)

File Size 72.56K  /  3 Page

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    BC847BDW1T1 BC847BDW1T1G BC846BDW1T1 BC848CDW1T1 BC847BDW1 BC848CDW1

ONSEMI[ON Semiconductor]
Part No. BC847BDW1T1 BC847BDW1T1G BC846BDW1T1 BC848CDW1T1 BC847BDW1 BC848CDW1
Description dual General Purpose transistors 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL transistor
ECONOLINE: RJ & RG - dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%

File Size 106.50K  /  6 Page

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    CENTRAL[Central Semiconductor Corp]
Part No. CMLT2907A
Description SMD Small Signal transistor dual PNP General Purpose Amplifier/Switc
SURFACE MOUNT dual PNP SILICON transistorS
SURFACE MOUNT dual PNP SILICON transistorS

File Size 94.37K  /  2 Page

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    BSS138DW09 BSS138DW-7-F

Diodes Incorporated
Diodes, Inc.
Part No. BSS138DW09 BSS138DW-7-F
Description dual N-CHANNEL ENHANCEMENT MODE FIELD EFFECT transistor
MOSFET dual N-CHAN 50V sot363 200 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 104.29K  /  5 Page

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    BC847BDW1T3

ON Semiconductor
Part No. BC847BDW1T3
Description General Purpose transistor dual NPN; Package: SC-88/SC70-6/sot-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 10000 100 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL transistor

File Size 94.73K  /  7 Page

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