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				Teccor Electronics
Part No.	QK006DH3 QK006DH4 QK006LH4 QK006NH4 QK006RH4 QK006VH3 QK006VH4 QK008DH4 QK008LH4 Q2016RH3 Q2016RH4 Q4016RH3 Q4016RH4 Q4016RH6 Q6016RH3 Q8016RH3 Q8016RH4 Q8016RH6 Q2016NH3 Q2016NH4 Q2016NH6 Q8016LH3 Q8016LH4 Q8016LH6 Q8016NH3 Q8016NH4 Q8016NH6 Q4008NH4 Q6010NH5 Q6008VH4 Q6016NH3
OCR Text	...t = 0.54 rated IT(RMS)/ms; gate unenergized I2t -- RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM -- Peak off-state current gate open; VDRM = maximum rated value IGT -- DC gate trigger current in specific o...
Description	Alternistor Triacs
File Size	186.90K / 10 Page	View it Online	Download Datasheet

				Motorola
Part No.	T2322 T2323
OCR Text	...utating di/dt = 1.26 A/ms, Gate unenergized, TC = 90C) *Pulse Test: Pulse Width p 300 s, Duty Cycle p 2%. 2 Motorola Thyristor Device Data T2322 T2323 Series PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING ...
Description	(T2322 / T2323) SENSITIVE GATE TRIACs
File Size	82.19K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	T2322-D T2322B
OCR Text	...utating di/dt = 1.26 A/ms, Gate unenergized, TC = 90C) (1) Pulse Test: Pulse Width 1.0 ms, Duty Cycle 2%. dv/dt dv/dt(c) 10 1.0 100 4.0 -- -- V/s V/s http://onsemi.com 2 T2322B Voltage Current Characteristic of Triacs (Bidirectio...
Description	Sensitive gate Triac Silicon Bidirectional Thyristors(2.5A,200V敏感门三端双向可控硅晶闸 TRIAC 2.5A 200V Sensitive Gate Triacs
File Size	67.94K / 4 Page	View it Online	Download Datasheet

				Motorola, Inc. Motorola Mobility Holdings, Inc.
Part No.	MAC15A8 MAC15-10 MAC15A4 MAC15-8 MAC15-6
OCR Text	...mutating di/dt = 7.6 A/ms, Gate unenergized, TC = 80C) tgt -- 1.5 -- s dv/dt(c) -- 5 -- V/s FIGURE 1 - RMS CURRENT DERATING 130 PAV , AVERAGE POWER (WATTS) TC, CASE TEMPERATURE ( C) 120 = 30 = 60 = 90 11...
Description	TRIACs 15 AMPERES RMS 200 thru 800 VOLTS 600 V, 15 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
File Size	74.23K / 4 Page	View it Online	Download Datasheet

				Littelfuse
Part No.	Q4004LX
OCR Text	... 0.54 rated i t(rms) /ms; gate unenergized i 2 t ? rms surge (non-repetitive) on-state current for period of 8.3 ms for fusing i drm ? peak off-state current, gate open; v drm = maximum rated value i gt ? dc gate trigger current in sp...
Description	Triacs
File Size	264.06K / 10 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers
Part No.	TGS2442
OCR Text	....................7 influence of unenergized storage...............................................................7 reliability interference gas test......................................................................................8 lon...
Description	Detection of Carbon Monoxide
File Size	514.54K / 25 Page	View it Online	Download Datasheet

				Teccor Electronics
Part No.	L6004DX
OCR Text	... 0.54 rated i t(rms) /ms; gate unenergized i 2 t ? rms surge (non-repetitive) on-state current for period of 8.3 ms for fusing i drm ? peak off-state current, gate open; v drm = max rated value i gt ? dc gate trigger current in specif...
Description	Sensitive Triacs
File Size	195.22K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MAC228A-D
OCR Text	...mutating di/dt = 4.1 a/ms, gate unenergized, t c = 80 c) dv/dt(c) e 5.0 e v/ m s mac228a series http://onsemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blockin...
Description	Sensitive Gate Triacs Silicon Bidirectional Thyristors
File Size	95.25K / 8 Page	View it Online	Download Datasheet

				Zilog, Inc.
Part No.	AN031102-0311
OCR Text	...ge is in turn generated in the unenergized phase winding, and the zero crossing of this induced voltage is detected for synchronization of the subsequent closed-loop control events. as discussed earlier, th e innovative time stamp fe...
Description	Sensorless Brushless DC Motor Control with the Z16FMC MCU
File Size	2,367.54K / 26 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MAC218A6FP-D
OCR Text	...utating di/dt = 4.1 a/ms, gate unenergized, t c = 80 c) dv/dt (c) 5.0 v/ m s critical rate of rise of offstate voltage (v d = rated v drm , exponential voltage rise, gate open, t j = 125 c) dv/dt 100 v/ m s 3. pulse test: pulse wi...
Description	Triacs Silicon Bidirectional Thyristors
File Size	53.27K / 8 Page	View it Online	Download Datasheet

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