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				ONSEMI[ON Semiconductor]
Part No.	MC33161D MC33161DR2 MC33161P MC34161 MC34161D MC34161DR2 MC34161P MC33161
OCR Text	... L = wafer Lot YY, Y = Year ww, w = work week 3x161 ALYw MC3x161P AwL YYww 8 PIN CONNECTIONS Simplified Block Diagram (Positive Volta...ch 1) Vth(ch 2) Vref+0.15 0.3 Vref+0.23 0.63 Vref+0.30 0.9 V Vth Vth VH VD VRTD IIB 1.245 1.235 - 15...
Description	Tag-it(TM) HF-I Plus Transponder Inlays CD 0-RFIDN -25 to 70 2-chANNEL POwER SUPPLY SUPPORT CKT, PDSO8 Tag-it(TM) HF-I Pro Standard Transponder Inlays CD 0-RFIDN -25 to 70 Tag-it(TM) HF-I Standard Transponder Inlays 24.2-mm Circular 0-RFIDN -25 to 70 Universal Voltage Monitors
File Size	364.39K / 16 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	RSS140N03
OCR Text	...-55 to +150 Unit V V A A A A w C C 1 1 2 0.50.1 (1) (4) 0.20.1 1/3 RSS140N03 Transistor Thermal resistance (Ta=25C) Pa...ch-a) Limits 62.5 Unit C / w Electrical characteristics (Ta=25C) Parameter Symbol IGSS G...
Description	Switching (30V / 14A) Switching (30V, 14A) Switching (30V 14A)
File Size	59.14K / 4 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8102
OCR Text	....24 150 -55 to 150 Unit V V V A w w mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation Drain power dissipation wei...ch-a) Rth (ch-a) Max 52.1 125 Unit C/w C/w Marking (Note 5) TPC8102 Type Note 1: Please ...
Description	TOSHIBA Field Effect Transistor Silicon P channel MOS Type (MOSVI)
File Size	469.72K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8106-H
OCR Text	....24 150 -55 to 150 Unit V V V A w w mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B weight: 0.080 g (typ.) Drain power dissipation Drai...ch-a) Rth (ch-a) Max 52.1 125 Unit C/w C/w Marking (Note 5) TPC8106 H Type Note 1: Ple...
Description	SILICON P chANNEL MOS TYPE
File Size	510.73K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8107
OCR Text	...B Drain power dissipation w 1.0 w weight: 0.080 g (typ.) 219 -13 0.19 150 -55 to 150 mJ A mJ C C Circuit Configurati...ch-a) Max 65.8 Unit C/w Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a)...
Description	Field Effect Transistor Silicon P channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P channel MOS Type (U-MOSIII)
File Size	215.18K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8108
OCR Text	...B Drain power dissipation w 1.0 w weight: 0.080 g (typ.) 157 -11 0.19 150 -55 to 150 mJ A mJ C C Circuit Configurati...ch-a) Max 65.8 Unit C/w Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a)...
Description	Silicon P channel MOS Type (U-MOSIII)
File Size	340.81K / 7 Page	View it Online	Download Datasheet

For w ch Found Datasheets File :: 21907 Search Time::2.828ms
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