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  .8a Datasheet PDF File

For .8a Found Datasheets File :: 16746    Search Time::0.859ms    
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    ZXM64N02X ZXM64N02XTA ZXM64N02XTC

ZETEX[Zetex Semiconductors]
Part No. ZXM64N02X ZXM64N02XTA ZXM64N02XTC
OCR Text ...3.3 0.95 V ns nC T j=25C, I S=3.8a, V GS=0V T j=25C, I F=3.8a, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 5.7 9.6 28.3 11.6 16 3.5 5.4 ns ns ns ns nC nC nC V DS=16V,V GS=4.5V, I D =3.8a (Refer to test circuit) V DD =10V, I D=3.8a R G...
Description N-channel MOSFET
20V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 179.82K  /  7 Page

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    ZXM64P03X ZXM64P03XTA ZXM64P03XTC

ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
Part No. ZXM64P03X ZXM64P03XTA ZXM64P03XTC
OCR Text 8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power mana...
Description P-channel MOSFET
30V P-CHANNEL ENHANCEMENT MODE MOSFET 3800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA

File Size 204.38K  /  7 Page

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    ZXM66P03N8 ZXM66P03N8TA ZXM66P03N8TC

ZETEX[Zetex Semiconductors]
Part No. ZXM66P03N8 ZXM66P03N8TA ZXM66P03N8TC
OCR Text ...I D =-5.6A V GS =-4.5V, I D =-2.8a V DS =-15V,I D =-5.6A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subj...
Description 30V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 48.19K  /  4 Page

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    ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC

Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Part No. ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
OCR Text ... V DS =V GS V GS = 10V, I D = 5.8a V GS = 4.5V, I D = 5.3A S V DS = 15V, I D = 5.8a 1800 289 178 pF pF pF V DS = 25V, V GS =0V f=1MHz 5.5 8.7 33 8.5 19.4 36 5.5 ns ns ns ns nC nC nC nC V DD = 15V, I D =6A R G 6.0 , ...
Description COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 7.6 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N & P-channel MOSFET

File Size 183.69K  /  8 Page

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    ZXMD65P03N8 ZXMD65P03N8TA ZXMD65P03N8TC

ZETEX[Zetex Semiconductors]
Part No. ZXMD65P03N8 ZXMD65P03N8TA ZXMD65P03N8TC
OCR Text 8A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power ma...
Description DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 64.18K  /  4 Page

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    ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC

ZETEX[Zetex Semiconductors]
Part No. ZXMN2A04DN8 ZXMN2A04DN8TA ZXMN2A04DN8TC
OCR Text 8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power manageme...
Description DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 55.20K  /  4 Page

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    ZXMN3A03E6 ZXMN3A03E6TA ZXMN3A03E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXMN3A03E6 ZXMN3A03E6TA ZXMN3A03E6TC
OCR Text ...V DS = V GS D V GS =10V, I D =7.8a V GS =4.5V, I D =6.8a V DS =10V,I D =7.8a SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output...
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 924.08K  /  7 Page

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    ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC

Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Part No. ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC
OCR Text ....45A, V GS =0V T J =25C, I F =1.8a, di/dt= 100A/s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.8 1.4 4.9 2.0 1.65 3.2 0.67 0.82 ns ns ns ns nC nC nC nC V DS =30V,V GS =10V, I D =1.8a V DS =30V, V GS =5V, I D =1.8a V DD =30V, I D =1.8a R G =6.0,...
Description 60V N-CHANNEL ENHANCEMENT MODE MOSFET 60V的N沟道增强型MOS

File Size 1,026.04K  /  7 Page

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    ZXMN6A07Z ZXMN6A07ZTA

ZETEX[Zetex Semiconductors]
Part No. ZXMN6A07Z ZXMN6A07ZTA
OCR Text ...V DS = V GS D V GS =10V, I D =1.8a V GS =4.5V, I D =1.3A V DS =15V,I D =1.8a SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output...
Description 60V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 1,009.04K  /  7 Page

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    ZXMN6A08E6 ZXMN6A08E6TA ZXMN6A08E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXMN6A08E6 ZXMN6A08E6TA ZXMN6A08E6TC
OCR Text ...V DS = V GS D V GS =10V, I D =4.8a V GS =4.5V, I D =4.2A V DS =15V,I D =4.8a SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
60V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 848.66K  /  7 Page

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