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For 0.0037 Found Datasheets File :: 3668 Search Time::2.437ms
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				NEC[NEC]
Part No.	2SK2110
OCR Text	...ACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 2.5 0.1 4.0 0.25 1.5 0.1 0.8 MIN. S 0.42 0.06 D G FEATURES * Low ON resistance RDS(on) = 1.5 MAX. @VGS = 4.0 V, ID = 0.3 A * High switching speed ton + toff < 100 ns * Low...
Description	N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
File Size	55.69K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SK2341
OCR Text	...IMENSIONS (in millimeters) 10.0 0.3 4.5 0.2 2.7 0.2 FEATURES 3.2 0.2 * * * Low On-state Resistance RDS(on) = 0.26 MAX. (VGS = 10 V, ID = 6.0 A) 3 0.1 123 4 0.2 High Avalanche Capability Ratings Drain to Source Vo...
Description	MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	90.60K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK2510
OCR Text	... PT2 Tch Tstg 20 40 160 35 2.0 150 V A A W W C 0.70.1 2.54 1.30.2 1.50.2 2.54 13.5MIN. VDSS 60 V 12.00.2 2.50.1 0.650.1 1. Gate 2. Drain 3. Source -55 to +150 C MP-45F (ISOLATED TO-220) Drain Body Diode...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
File Size	75.39K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK2511
OCR Text	...in millimeter) 4.7 MAX. 1.5 7.0 FEATURES * Super Low On-Resistance RDS (on)1 = 27 m (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 m (VGS = 4 V, ID = 20 A) 1.0 15.7 MAX. 4 3.20.2 20.00.2 6.0 * Low Ciss Ciss = 1 210 pF TYP. *...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
File Size	108.65K / 8 Page	View it Online	Download Datasheet

				NEC
Part No.	2SK2513-Z 2SK2513
OCR Text	...rent switching applications. 3.0 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 0.2 FEATURES * Low On-Resistance RDS(on)1 = 15 m (VGS = 10 V, ID = 23 A) RDS(on)2 =...
Description	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset MOS Field Effect Transistor
File Size	112.28K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK2515
OCR Text	...in millimeter) 4.7 MAX. 1.5 7.0 FEATURES * Super Low On-Resistance RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 m (VGS = 4 V, ID = 25 A) 1.0 15.7 MAX. 4 3.20.2 20.00.2 6.0 * Low Ciss Ciss = 3 400 pF TYP. * ...
Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
File Size	113.29K / 8 Page	View it Online	Download Datasheet

				hitachi
Part No.	2SK2596
OCR Text	... Tch Tstg 2 1 Ratings 17 10 0.4 1 3 150 -45 to +150 Unit V V A A W C C Electrical Characteristics (Ta = 25C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output ...
Description	Silicon NPN Triple Diffused From old datasheet system
File Size	41.60K / 7 Page	View it Online	Download Datasheet

				hitachi
Part No.	2SK2933
OCR Text	...res * Low on-resistance R DS = 0.040 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline 2SK2933 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain cur...
Description	Silicon NPN Triple Diffused From old datasheet system
File Size	27.85K / 6 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SK2951
OCR Text	.... Ultrahigh-speed switching. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-...
Description	N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	26.84K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3403NBSP 2SK3403
OCR Text	...ource ON resistance: RDS (ON) = 0.29 (typ.) High forward transfer admittance: \|Yfs\| = 5.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 450 V) Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings...
Description	Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
File Size	229.16K / 6 Page	View it Online	Download Datasheet

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