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				Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	1214-300M
OCR Text	...h - Stability 300 8.75 50 10.0 400 55 2:1 1.5:1 Watts dB % dB Note 1: Pulse condition of 150sec, 10%. Bvces Ices Iebo Collector ...1300 MHz 1400 MHz 40.0 30.0 20.0 10.0 0.0 0 10 20 30 40 50 60 70 1200 MHz 1300 MHz 1400 MHz ...
Description	L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
File Size	117.23K / 4 Page	View it Online	Download Datasheet

				CEL[California Eastern Labs]
Part No.	NDL5461P_00 NDL5461P NDL5461P1 NDL5461P1C NDL5461P1D NDL5461P1S NDL5461P1SC NDL5461P1SD NDL5461P2 NDL5461P2C NDL5461P2D NDL5461P2S NDL5461P2SC NDL5461P2SD NDL5461PC NDL5461PD NDL5461PS NDL5461PSC NDL5461PSD
OCR Text	0.1 nA * HIGH QUANTUM EFFICIENCY: = 86% at = 1300 nm = 75% at = 1550 nm * DETECTING AREA SIZE: 80 m * COAXIAL MODULE WITH MULTIMODE FIBER: GI-50/125 * OPTIONAL SINGLE MODE FIBER: SM-9/125 * LOW OPERATING VOLTAGE: VR = 5 V NDL5461P S...
Description	1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 80 um InGaAs PIN PHOTO DIODE MODULE
File Size	33.45K / 5 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NOIL2SM1300A-GWC NOIL2SM1300A-GDC NOIL2SC1300A-GDC
OCR Text	...parameter value conversion gain 0.0325 lsb10/e - full well charge 30 ke - responsivity 63 lsb10/nj/cm 2 at 550 nm fill factor 40% parasitic...1300-2 color devices at +150 c for 500 hours. t emperature cycling was successfully completed from...
Description	LUPA1300-2: High Speed CMOS Image Sensor
File Size	772.60K / 44 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	1214-150L
OCR Text	...X 200 8.7 UNITS W dB % dB 0.5 3.0:1 dB FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces h FE jc 1 Emitter to Base Breakdown Coll...1300 1350 1400 Frequency MHz Pgain Efficiency 1200 MHz Power Output vs Power Input Lot G2740-7, ...
Description	150 Watts, 36 Volts, 5 ms, 20% Radar 1200 to 1400 MHz
File Size	86.65K / 4 Page	View it Online	Download Datasheet

				Solid States Devices, Inc
Part No.	SDR1RHF
OCR Text	...t l = 25c, l = 1/8?) i o 1.0 amp peak surge current (8.3 msec pulse, half sine wave superimposed on io, allow junction to reach equilibrium between pulses, t a = 25c) i fsm 12 amps operating & storage temperature t op and...
Description	HYPER FAST RECTIFIER
File Size	104.04K / 2 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NDL5481P2 NDL5421P NDL5421P2 NDL5422P NDL5461P NDL5461P1 NDL5461P2 NDL5471R NDL5471RC NDL5471RD NDL5481P NDL5481P1
OCR Text	...ze * Low operating voltage ID = 0.1 nA = 86 % @ = 1 300 nm = 80 % @ = 1 550 nm fC = 1.5 GHz MIN. 120 m PACKAGE DIMENSIONS NDL5...1300 1550 TYP. (GHz) MIN. 0.89 0.94 0.89 1.00 0.89 0.94 0.89 1.00 0.85 2.5 Coaxial 1.5 Receptacle...
Description	1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 120 mm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE
File Size	57.53K / 8 Page	View it Online	Download Datasheet

				NEC CEL[California Eastern Labs]
Part No.	NDL5521PD NDL5521P NDL5521P1 NDL5521P1C NDL5521P1D NDL5521P2 NDL5521P2C NDL5521P2D NDL5521PC
OCR Text	...ge1 Dark Current, VR = V(BR)R x 0.9 Multiplied Dark Current, M = 2 to 10 Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz Cut-off Frequenc...1300 nm, M = 1 = 1550 nm, M = 1 Responsivity, = 1300 nm, M = 1 = 1550 nm, M = 1 Multiplication Fa...
Description	2.5 Gb/s optical fiber communications 50 um InGaAs avalanche photo diode modul with MMF . With FC-PC connector, vertical flange. 2.5 Gb/s OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE WITH MMF
File Size	29.48K / 3 Page	View it Online	Download Datasheet

				CEL[California Eastern Labs]
Part No.	NDL5551P_00 NDL5551P NDL5551P1 NDL5551P1C NDL5551P1D NDL5551P2 NDL5551P2C NDL5551P2D NDL5551PC NDL5551PD
OCR Text	...age Dark Current, VR = V(BR)R x 0.9 Multiplied Dark Current, M = 2 to 10 Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz Cut-off Frequency, M = 10 M = 20 Quantum Efficiency, = 1300 nm, M = 1 = 1550 nm, M = 1 Responsivity, = 1300 nm =...
Description	1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE
File Size	44.43K / 5 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA2510-EPU
OCR Text	...l Power Detector with Reference 0.25m pHEMT 3MI Technology Bias Conditions: 7.5V, 650mA Chip Dimensions: 2.02 x 1.38 x 0.10 mm (0.080 x 0.05...1300 mA 18 mA 24 dBm 6.43 W 150 C 320 C -65 to 150 C 0 0 0 Notes 1/ 2/ 1/ 1/ 2/ 1/ 1/ 2/ 1/ 2/ 3...
Description	Ku Band, 2 Watt Power Amplifier
File Size	261.35K / 11 Page	View it Online	Download Datasheet

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