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ST Microelectronics
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| Part No. |
SD2921-10
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| OCR Text |
... sd2921-10 1. drain 3.gate 2. source 4. source 1/10
electrical specification (t...26 26.5 pout, output power (w) pg, power gain (db) f = 30 mhz vdd = 50 v idq = 250 ma sc13170 gate-... |
| Description |
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS
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| File Size |
334.91K /
10 Page |
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it Online |
Download Datasheet
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FX20ASJ-2
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| OCR Text |
...
FX20ASJ-2
OUTLINE DRAWING
1.5 0.2
6.5 5.0 0.2
4
Dimensions in mm
0.5 0.1
5.5 0.2 1.0 max 2.3 min
10 max
1.0
A
...26 * ID .................................................................... -20A * Integrated Fast ... |
| Description |
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
49.60K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FX20ASJ-2 FS4KM-12
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| OCR Text |
...
FX20ASJ-2
OUTLINE DRAWING
1.5 0.2
6.5 5.0 0.2
4
Dimensions in mm
0.5 0.1
5.5 0.2 1.0 max 2.3 min
10 max
1.0
A
...26 * ID .................................................................... -20A * Integrated Fast ... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
44.40K /
4 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
PTFA080551EV4R250
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| OCR Text |
1 of 11 rev. 04.1, 2016-06-16 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?o...26 w avg, ? = 959.8 mhz characteristic symbol min typ max unit error vector magnitude evm (rms) ? 2.... |
| Description |
Thermally-Enhanced High Power RF LDMOS FETs
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| File Size |
4,436.53K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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