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  1.5a-peak Datasheet PDF File

For 1.5a-peak Found Datasheets File :: 29737    Search Time::1.719ms    
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    2SC4054

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4054
OCR Text ...urrent At rated Voltage I Max 0.1 mA CBO I Max 0.1 CEO Emitter Cutoff Current I At rated Voltage Max 0.1 mA EBO DC Current Gain h = Min 10 CE C 2.5A FE V = 5V, I h = Min 5 CE C 1mA FEL V = 5V, I Collector to Emitter Saturation2.5A V (sat) I...
Description Switching Power Transistor(5A NPN)

File Size 360.85K  /  12 Page

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    2SC4058

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4058
OCR Text ...8 100 0.8 Ratings Min 450 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 5 Max 1.0 Max 1.5 Max 1.25 STD 20 Max 0.5 Max 2.0 Max 0.2 Unit V V V A A ...5A VCE = 5V, IC = 1mA IC = 5A IB = 1A Junction to case VCE = 10V, IC = 1A IC = 5A IB1 = 1A, IB2 = 2A...
Description Switching Power Transistor(10A NPN)

File Size 519.37K  /  12 Page

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    2SC4059

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4059
OCR Text ...2 130 0.8 Ratings Min 450 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 5 Max 1.0 Max 1.5 Max 0.96 STD 20 Max 0.5 Max 2.0 Max 0.2 Unit V V V A A ...5A VCE = 5V, IC = 1mA IC = 7.5A IB = 1.5A Junction to case VCE = 10V, IC = 1.5A IC = 7.5A IB1 = 1.5A...
Description Switching Power Transistor(15A NPN)

File Size 523.75K  /  12 Page

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    2SC4559

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4559
OCR Text 1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q High collector to emitter VCEO High-speed switching Full-pack pac...5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -1.2A, VCC = 150V 5.5 1.0 3.0 0.3 400 10 8 1.0 1.5 V V MHz s...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.09K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ...3.00.2 4.20.2 Unit: mm 5.00.1 10.00.2 1.0 s Features q q q High foward current transfer ratio hFE High-speed switching Allowing a...5A, f = 1MHz IC = -2A, IB1 = -8mA, IB2 = 8mA, VCC = -50V 20 0.2 2 -60 -80 1000 2000 10000 -2.8 -2.5 ...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ...y to 2SB1418 and 2SB1418A 5.00.1 Unit: mm q q 2.50.2 High forward current transfer ratio hFE which has satisfactory linearity A...5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = -8mA, VCC = 50V min typ max 100 100 100 100 100 U...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SD2139

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2139
OCR Text ...es q q 13.00.2 4.20.2 5.00.1 10.00.2 1.0 q 2.50.2 High foward current transfer ratio hFE Satisfactory linearity of foward curr...5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz min typ max 100 100 100 Unit A A ...
Description Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

File Size 49.15K  /  3 Page

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    2SJ317

HITACHI[Hitachi Semiconductor]
Part No. 2SJ317
OCR Text ... etc. Outline UPAK 21 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ317 Absolute Maximum Ratings (Ta = 25C) Item Drain t...5A -1 A -0.5 A -0.2 -0.1 A -0.1 -0.5 A -0.2 A 0.2 0 -25 VGS = -4 V 0 -1 -2 -3 G...
Description Silicon P-Channel MOS FET

File Size 37.77K  /  8 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ...92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage...5A, VGS = 0 I F = -5A, VGS = 0 diF/ dt = 20A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ...ne TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ratings (Ta = 25C) Item Drain to source volta...5A, VGS = 0 I F = -5A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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For 1.5a-peak Found Datasheets File :: 29737    Search Time::1.719ms    
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