|
|
![](images/bg04.gif) |
Mitsubishi Electric Corporation
|
Part No. |
FD1000FX-90
|
OCR Text |
...ation circuit 0 20 40 60 80 100 120 140 160 10 4 10 0 10 3 7 5 3 2 10 1 7 5 3 2 10 2 7 5 3 2 7 5 3 2 trr q rr t trr trr irm q rr = 2 irm i ...150v max. av. max. av. forward current (a) forward voltage (v) maximum forward characteristics pow... |
Description |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
File Size |
47.92K /
3 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
ST Microelectronics
|
Part No. |
LCP1521SRL
|
OCR Text |
...h(j-a) junction to ambient so-8 120 c/w qfn 140 symbol parameter i gt gate triggering current i h holding current i rm reverse leakage curre...150v v rg = -150v t j = 25c t j = 85c 5 50 a v dgl v gate = -48v (note 3) 10/700s 1.2/50s 2/10s ... |
Description |
PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
|
File Size |
113.90K /
11 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
ZETEX[Zetex Semiconductors]
|
Part No. |
FZT955_05 FZT955
|
OCR Text |
... 200 140 10 110 40 68 1030 -60 -120 -150 -370 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA IC=-100A IC=-1A, RB 1k IC=-10mA* IE=-100A VCB=-150V VCB=-150V,Tamb=100C VCB=-150V VCB=-150V,Tamb=100C VEB=-6V IC=-100mA, IB=-5mA* IC=-500mA,IB=-50mA* ... |
Description |
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
|
File Size |
177.00K /
5 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|