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  13-ohm Datasheet PDF File

For 13-ohm Found Datasheets File :: 18917    Search Time::2.313ms    
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    DS-327 DS-327PIN

MACOM[Tyco Electronics]
Part No. DS-327 DS-327PIN
OCR Text 13) 8 PLACES 1 2 3 4 Broadband, IN Phase Divider Low Loss - 0.3 dB Typical Amplitude Balance - 0.05 dB Typical 0.312 MIN TYP (7.9 MIN...ohm source and load impedance. Ordering Information Specifications Subject to Change Without N...
Description Surface Mount Two-Way Power Divider 5 - 1000 MHz
Flatpack Two-Way Power Divider 5 - 1000 MHz

File Size 87.88K  /  1 Page

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    FDFS6N303

FAIRCHILD[Fairchild Semiconductor]
Part No. FDFS6N303
OCR Text ....043 12 15 350 220 80 12 7.5 12 13 6 17 15 25 25 15 1.3 (Note 2) V A A nA nA V Gate - Body Leakage, Forward Gate - Body Leakage, Reve...OHM) 1.6 DRAIN-SOURCE ON-RESISTANCE ID = 6A VGS = 10V I D = 3A 0.075 R DS(ON) , NORMALI...
Description N-Channel MOSFET with Schottky Diode

File Size 94.24K  /  5 Page

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    HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3ST HUF75343S3NL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3ST HUF75343S3NL
OCR Text ...L = 0.4 Ig(REF) = 1.0mA (Figure 13) 170 92 6.0 13 42 205 110 7.2 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 30V, ID 75A, RL = 0.4, VGS = 10V, RGS = 2.5 9 75 32 18 125 75 ns ns ns ns ns ns (c)2003 Fairchild Semiconductor Corporat...
Description 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 228.29K  /  10 Page

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    IR3080 IR3080M IR3080MTR

IRF[International Rectifier]
Part No. IR3080 IR3080M IR3080MTR
OCR Text ...17 TRM2 10 11 12 13 14 TRM4 VID4 15 16 9 VDAC Page 1 of 41 9/30/04 IR3080 ORDERING INFORAMATIO...ohm pull-up resistors to VIDPWR pin are included. Used for precision post-package trimming of the VD...
Description XPHASETM VRD10 CONTROL IC WITH VCCVID & OVERTEMP DETECT
XPHASE VRD10 CONTROL IC WITH VCCVID & OVERTEMP DETECT

File Size 1,031.81K  /  41 Page

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    KFM220M

Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
Part No. KFM220M
OCR Text ...ILSTOP SYMBOL fo IL 221. 01 219.13 35 35 50 MIN. TYP. 220.38 8.0 219. 67 221. 14 219.26 221.57 40 39.8 47 46 0.8 1.2 50 /50 50 /500 MAX. 9.5...ohm single ended source / 50 ohm single ended load) Circular Index Mark 1 12 2 3 4 5 6 ...
Description Korea-PCS
SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR KOREAN PCS IF STAGE)

File Size 160.81K  /  3 Page

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    MRF148

MOTOROLA[Motorola, Inc]
Part No. MRF148
OCR Text ...Q = 1.0 A) GPS IMD(d3) IMD(d9 - 13) -- -- -- 20 - 50 - 70 -- -- -- dB NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Re...Ohm, 1/4 W Carbon R2 -- 2000 Ohm, 1/4 W Carbon RFC1 -- VK200 21/4B T1 -- 4:1 Transformer, 1.75 Submi...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 145.04K  /  6 Page

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    MRF154

MOTOROLA[Motorola, Inc]
Part No. MRF154
OCR Text ...nction to Case Symbol RJC Max 0.13 Unit C/W Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Re...Ohm CO-AX Cable RG-188, T2 -- Low Impedance Lines W.L. Gore 16 Ohms CO-AX Type CXN 1837. T2 -- Each ...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 160.11K  /  8 Page

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    MRF175GU MRF175GV

MOTOROLA[Motorola, Inc]
Part No. MRF175GU MRF175GV
OCR Text ...o drain respectively. Figure 13. Series Equivalent Input/Output Impedance RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structu...
Description N-CHANNEL MOS BROADBAND RF POWER FETs

File Size 183.29K  /  8 Page

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    MRF18030A MRF18030ALR3 MRF18030ALSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text ...3 Suffix = 250 Units per 32 mm, 13 inch Reel. 1.8 - 1.88 GHz, 30 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, ...ohm system unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Volt...
Description SEE A3282EUA-T
CHOPPER STABILIZED LATCH W/TIN PLATING
SEE A3282ELHLT-T
RF Power Field Effect Transistors

File Size 504.66K  /  8 Page

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