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Advanced Power Electron...
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| Part No. |
AP9997GK-HF-14
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| OCR Text |
...g total gate charge 2 i d =3a - 14 22 nc q gs gate-source charge v ds =80v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 5.5 - nc...140 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c 0 2 4 6 8 10 0 0.... |
| Description |
Simple Drive Requirement
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| File Size |
91.33K /
4 Page |
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it Online |
Download Datasheet
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Advanced Power Electron...
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| Part No. |
AP4438CGM-HF-14
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| OCR Text |
... junction temperature 3 8 10 12 14 16 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =7a t a =25 0 10 20 30 40 50 60 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10 v 7.0 v 6.0 v 5.0 v v... |
| Description |
Simple Drive Requirement
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| File Size |
92.27K /
4 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP30G100W-14
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| OCR Text |
... -- 2.20 d 19.70 20.00 20.30 d1 14.70 15.00 15.30 e 15.30 -- 16.10 b2 e 4.45 5.45 6.45 l 17.50 -- 20.50 3.00 3.20 3.40 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing ... |
| Description |
High speed switching
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
211.23K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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