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  16mx16 Datasheet PDF File

For 16mx16 Found Datasheets File :: 292    Search Time::1.016ms    
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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. M470L3224DT0-LB0 M470L3224DT0-CB3 M470L3224DT0-CB0 M470L3224DT0-LB3 M470L3224DT0-CA2 M470L3224DT0-LA2
OCR Text ...00pin ddr sdram sodimm based on 16mx16 the samsung m470l3224dt0 is 32 m bit x 64 double data rate sdram high density memory modules. the samsung m470l3224dt0 consists of eight cmos 16 m x 16 bit with 4banks double data rate sd...
Description 256MB DDR SDRAM MODULE 256MB的DDR内存模块

File Size 154.83K  /  12 Page

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    HYMD232M646AL6-J

Hynix Semiconductor
Part No. HYMD232M646AL6-J
OCR Text ...nbuffered ddr so-dimm based on 16mx16 ddr sdram ? jedec standard 200-pin small outline dual in-line memory module (so-dimm) ?2.6v 0.1v vdd and vddq power supply (2.5v 0.2v for ddr333) ? all inputs and outputs ar e compatible wi...
Description DDR SDRAM - SO DIMM 256MB

File Size 304.20K  /  18 Page

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    HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DCL-8 HYB39S256800DTL-6 HYB39S256800DTL-75 HYB39S256160DC-6 HYB39S256160

Infineon Technologies AG
Infineon Technologies A...
Part No. HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DCL-8 HYB39S256800DTL-6 HYB39S256800DTL-75 HYB39S256160DC-6 HYB39S256160DC-7 HYB39S256160DC-8 HYB39S256800DC-8 HYB39S256400DC-7.5 HYB39S256400DT-7.5 HYB39S256160DC-7.5 HYB39S256800DC-7.5 HYB39S256160DT-7.5 HYB39S256800DCL-75 HYB39S256400DCL-75 HYB39S256400DC-75 HYB39S256400DCL-8 HYB39S256800DT-6 HYB39S256800DT-75 HYB39S256800DTL-8 HYB39S256800DT-8 HYB39S256800DC-6
OCR Text ... mil, 0.8 mm pitch) 64mx4 32mx8 16mx16 infineon technologies 4 2002-04-23 hyb39s256400/800/160dt(l)/dc(l) 256mbit synchronous dram pinouts (tfbga-54) pin configuration for x16 devices: pin configuration for x8 devices: pin configuration f...
Description Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
   256 MBit Synchronous DRAM

File Size 379.81K  /  22 Page

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    Samsung Electronics
Part No. K8F5615EBM
OCR Text ... bank flash memory organized as 16mx16. the memory architecture of the device is designed to divide its memory arrays into 259 blocks with independent hard- ware protection. this block archit ecture provides highly flexible erase and progr...
Description 256Mb M-die MLC NOR Specification

File Size 1,124.45K  /  59 Page

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    HY27SS08561M HY27US16561M

Hynix Semiconductor
Part No. HY27SS08561M HY27US16561M
OCR Text ...ument title 256mbit (32mx8bit / 16mx16 bit) nand flash memory revision history no. history draft date remark 0.0 initial draft jul. 10. 2003 preliminary 0.1 renewal product group dec. 08. 2003 preliminary 0.2 append 1.8v operation product t...
Description (HY27xSxx561M) 256Mbit (32Mx8bit / 16mx16bit) NAND Flash

File Size 804.30K  /  44 Page

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    天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
Part No. IS42VM16160D-8BLI IS42VM16160D-8BLI-TR IS42VM16160D-10TL
OCR Text ...2vm16160d / is42vm32800d 32mx8, 16mx16, 8mx32 256mb mobile synchronous dram preliminary information august 2010 features fully synchronous; all signals referenced to a ? positive clock edge internal bank for hiding row access and pre - ? ...
Description 16M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54

File Size 487.67K  /  23 Page

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    天津新技术产业园区管理委员会
Part No. IS43R16160B-6TLI IS43R16160B-5TL-TR IS43R16160B-6TL-TR IS43R16160B-5TLI-TR IS43R16160B-6TLI-TR
OCR Text 16mx16 256Mb DDR Synchronous DRAM * Vdd =Vddq = 2.5V+0.2V (-5, -6, -75) * Double data rate architecture; two data transfers per clock cycle. * Bidirectional , data strobe (DQS) is transmitted/ received with data * Differential clock input ...
Description
File Size 688.55K  /  40 Page

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    Hynix Semiconductor Inc.
Part No. HY27SS561M HY27US08561M HY27SS16561M HY27US561M HY27SS08561M HY27US16561M
OCR Text ...ument title 256mbit (32mx8bit / 16mx16 bit) nand flash memory revision history no. history draft date remark 0.0 initial draft jul. 10. 2003 preliminary 0.1 renewal product group dec. 08. 2003 preliminary 0.2 append 1.8v operation product t...
Description 256Mbit (32Mx8bit / 16mx16bit) NAND Flash

File Size 735.18K  /  44 Page

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    IS43R16160B-6BL IS43R16160B-5BLI IS43R16160B-5BL-TR IS43R16160B-6BLI IS43R16160B-6BL-TR IS43R16160B-6BLI-TR IS43R16160B-

天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
Part No. IS43R16160B-6BL IS43R16160B-5BLI IS43R16160B-5BL-TR IS43R16160B-6BLI IS43R16160B-6BL-TR IS43R16160B-6BLI-TR IS43R16160B-5BI IS43R16160B-5TI IS43R16160B-5TLI IS43R16160B-6BI IS43R16160B-6TLI IS46R16160B-6BLA1 IS46R16160B-6TLA1 IS43R83200B-6TLI IS43R83200B-5TLI IS46R83200B IS46R83200B-6TLA1
OCR Text 16mx16 256Mb DDR Synchronous DRAM * Vdd =Vddq = 2.5V+0.2V (-5, -6, -75) * Double data rate architecture; two data transfers per clock cycle. * Bidirectional , data strobe (DQS) is transmitted/ received with data * Differential clock input ...
Description 32Mx8, 16mx16 256Mb DDR Synchronous DRAM

File Size 837.08K  /  41 Page

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    M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423DTM-CCC/C4 M368L3223DTM-CCC/C4 M368L1624DTM-CCC/C4 M381L3223DTM-LCC/C4

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M381L6423DTM-CCC/C4 M381L3223DTM-CCC/C4 M368L6423DTM-CCC/C4 M368L3223DTM-CCC/C4 M368L1624DTM-CCC/C4 M381L3223DTM-LCC/C4 M368L1624DTM-LCC/C4 M368L3223DTM-LCC/C4 M368L6423DTM-LCC/C4 M368L1624DTM-LCC M381L3223DTM-LCC M368L3223DTM-CCC M368L1624DTM-CCC M368L3223DTM-LCC M381L6423DTM-LCC/C4
OCR Text ... SDRAM Component Composition 16mx16( K4H561638D) * 4EA 32Mx8( K4H560838D) * 8EA 32Mx8( K4H560838D) * 16EA 32Mx8( K4H560838D) * 9EA 32Mx8( K4H560838D) * 18EA Height 1,250(mil) 1,250(mil) 1,250(mil) 1,250(mil) 1,250(mil) Operating Fr...
Description 184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC 184pin缓冲模块56MbD为基础的非ECC的模4/72-bit / ECC

File Size 355.93K  /  22 Page

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For 16mx16 Found Datasheets File :: 292    Search Time::1.016ms    
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