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DAESAN[Daesan Electronics Corp.]
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| Part No. |
1N4937 1N4933 1N4934 1N4935 1N4936
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| OCR Text |
1N4933 THRU 1N4937
Features
* Plastic package has Underwrites Laboratory Flammability Classification 94V-0 * Fast switching speed * Constr...8mH/1.4W
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
R1
115Va 60Hz
10K 2W
3 7
30W 50W NO... |
| Description |
CURRENT 1.0 Ampere VOLTAGE 50 to 600 Volts
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| File Size |
170.41K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SK3043
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| OCR Text |
...power supply
15.00.5
3.20.1
13.70.2 4.20.2
1.40.2 1.60.2 0.80.1
3.00.5
2.60.1
0.550.15
s Absolute Maximum Ratings (T...8mH, IL = 5A, VDD = 50V, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Sour... |
| Description |
Silicon N-Channel Power F-MOS FET
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| File Size |
44.70K /
3 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090BFLL03
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| OCR Text |
... TC = 25C Pulsed Drain Current
1
SFLL
* Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package * FAST ...8mH, RG = 25, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
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| File Size |
94.01K /
5 Page |
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it Online |
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DELTA[Delta Electronics, Inc.]
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| Part No. |
DT32-2039AT DT32-2010T DT32-2014T DT32-2023AT
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| OCR Text |
...
0.5
10 N1 N3 8 9 N2 7 N4
1
1 N1 N3 3 2 N2 N4 4 (2)
10
EC
1 2 3 4 5
PRI
3 SEC 2
PRI
8 SEC 9
4 (1)
7
DIM...8mH Min. @10KHz 0.1V SEC: 7.5uH Max. @100KHz 0.1V PRI: 2.20 SEC: 2.20 Max. Max. DT32-2014T (PRI:SEC)... |
| Description |
ADSL TRANSFORMER
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| File Size |
57.23K /
1 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA19N20C
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| OCR Text |
...) Drain Current - Pulsed
(Note 1)
FQA19N20C 200 21.8 13.8 87.2 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns ...8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 21.8A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
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| File Size |
868.89K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA7N65C
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| OCR Text |
...* * * * * * 7A, 650V, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tes...8mH, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting... |
| Description |
650V N-Channel MOSFET
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| File Size |
714.37K /
8 Page |
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it Online |
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