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				Molex Electronics Ltd.
Part No.	0010894046 10-89-4046 70216-0391
OCR Text	...cription: 0010894046 Active 2.54mm (.100") Pitch C-Grid(R) Breakaway Header, High Profile, Dual Row, Right Angle, 4 Circuits, 6.10mm (.240") Mating Pin Length, 0.76m (30") Gold (Au) Selective Plating Documents: 3D Model Packaging Spe...
Description	2.54mm (.100") Pitch C-Grid庐 Breakaway Header, High Profile, Dual Row, Right Angle, 4 Circuits, 6.10mm (.240") Mating Pin Length 2.54mm (.100) Pitch C-Grid? Breakaway Header, High Profile, Dual Row, Right Angle, 4 Circuits, 6.10mm (.240) Mating Pin Length
File Size	119.84K / 6 Page	View it Online	Download Datasheet

				ALTERA[Altera Corporation]
Part No.	EPF8452A EPF81500A EPF81188A EPF8636A EPF8820A EPF8282A EPF8282AV FLEX8000
OCR Text	...ce (PLD) family (see Table 1) - 2,500 to 16,000 usable gates - 282 to 1,500 registers System-level features - In-circuit reconfigurability (...row (horizontal) and column (vertical) FastTrack Interconnect path. Altera Corporation 5 FL...
Description	programmable logic device family FLEX8000包括EPF8282A. PROGRAMMABLE LOGIC DEVICES FAMILY
File Size	425.22K / 61 Page	View it Online	Download Datasheet

				HYNIX SEMICONDUCTOR INC
Part No.	HY5DU28822LT-K
OCR Text	...ent licenses are implied. rev.1.2/mar.00 description the hyundai hy5du28822 is a 134,217,728-bit cmos double data rate(ddr) synchronous dram...row address : a0 ~ a11, column address : a0 ~ a9, ap flag : a10 ras , cas , we row address strobe,...
Description	16M X 8 DDR DRAM, PDSO66
File Size	84.91K / 10 Page	View it Online	Download Datasheet

				ESS Technology ETC[ETC] List of Unclassifed Manufacturers
Part No.	ES4428 ES4427
OCR Text	...functions. * VideoCD 1.1 and 2.0, Interactive 3.0, Super VCD and Audio CD * * * * * compatibility available with Video CD / Super VCD pl...row address strobe 0. DRAM row address strobe 1 (active-low). DRAM address bus select 1 output. Only...
Description	Web/DVD Set-Top Box Solution
File Size	119.20K / 10 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HMT325V7EFR8A-PB HMT325V7EFR8A-RD HMT325V7EFR8A-H9 HMT351V7EFR4A HMT351V7EFR4A-RD HMT351V7EFR4A-H9 HMT351V7EFR4A-PB HMT351V7EFR8A-H9 HMT351V7EFR8A-RD HMT351V7EFR8A-PB
OCR Text	...1v7efr8a rev. 0.1 / dec. 2012 2 revision history revision no. history draft date remark 0.1 initial release dec.2012 rev. 0.1 / dec. 20...row address a0-a14 a0-a14 a0-a14 column address a0-a9 a0-a9, a11 a0-a9 bank address ba0-ba2 ba0-ba2 ...
Description	DDR3L SDRAM VLP Registered DIMM Based on 2Gb E-die
File Size	874.92K / 59 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...N (Top Views) * K4E17(6)0411(2)D-B * K4E17(6)0411(2)D-F VCC DQ0 DQ1 W RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 19 VSS DQ3 ...Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power(+5.0V) Power(+3.3...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...N (Top Views) * K4F17(6)0411(2)D-B * K4F17(6)0411(2)D-F VCC DQ0 DQ1 W RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 19 VSS DQ3 ...Row Address Strobe Column Address Strobe Read/Write Input Data Output Enable Power(+5V) Power(+3.3V)...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Molex Electronics Ltd.
Part No.	0702871100
OCR Text	...100 status: active description: 2.54mm (.100") pitch c-grid? header, breakaway, dual row, vertical, with retention pin, 8 circuits, 6.10mm (.240") mating pin length, 0.38m (15") gold (au) selectiv...
Description	2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with RetentionPin, 8 Circuits, 6.10mm (.240) Mating Pin Length, 0.38μm (15μ) Gold (Au) Selective
File Size	308.36K / 6 Page	View it Online	Download Datasheet

				EMC[ELAN Microelectronics Corp]
Part No.	EM91450B EM91450BP EM91450DK EM91450D EM91450AP EM91450 EM91450A EM91450C EM91450CK
OCR Text	.... * Wide operating voltage from 2.0 V to 5.5 V. * Low operating current, 0.15 mA (Pulse) and 0.3 mA (Tone) typically. * Adding resistor on k...Row/Column programming counter HFO HDO RMUTE XMUTE I/O circuit Memory latch & decoder ...
Description	TONE/PULSE DIALER WITH LCD INTERFACE AND I.P.P. DETECT FUNCTION
File Size	212.25K / 24 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	...l 20-pin plastic ZIP (ZP-20) 2 HM514400B/BL, HM514400C/CL Series Pin Arrangement HM514400BS/BLS Series HM514400CS/CLS Series HM51440...Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 ...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet

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