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  2.5-ghz Datasheet PDF File

For 2.5-ghz Found Datasheets File :: 23332    Search Time::1.5ms    
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    ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-36077 ATF-36077-STR ATF-36077-TRL ATF36077 ATF-36077-TR1
OCR Text ...60 3 DRAIN 2 SOURCE 25 20 Ga 1.2 NOISE FIGURE (dB) 15 0.8 NF[1] 10 The repeatable performance and consistency...GHz frequency range. This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate p...
Description 1.5-18GHz surface mount pseudomorphic HEMT
2-18 GHz Ultra Low Noise Pseudomorphic HEMT

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    ATF-36163 ATF-36163-BLK ATF-36163-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-36163 ATF-36163-BLK ATF-36163-TR1
OCR Text ...in. 9 50 15 -1.0 Typ. 1.2 10 60 25 -0.35 Max. 1.4[1] 40 -0.15 -3.5 Note: 1. Measured in a test circuit tuned for a typical device. ...GHz f = 12 GHz f = 4 GHz f = 12 GHz f = 4 GHz f = 12 GHz f = 4 GHz f = 12 GHz VDS = 2.0 V Units dB d...
Description 1.5-18 GHz Surface Mount Pseudomorphic HEMT

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    ATF-44101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-44101
OCR Text ...off Voltage: VDS = 2.5 V, IDS = 25 mA f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz Units dBm dB % mmho mA V 800 -5.4 Min. 31.0 7.5 Typ. Max. 32.0 31.5 8.5 5.5 35 300 1300 -4.0 1500 -2.0 5-89 5965-8727E ATF-44101 Abso...
Description 2-8 GHz Medium Power Gallium Arsenide FET

File Size 60.35K  /  3 Page

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    ATF-45101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45101
OCR Text ...30 20 29 P1 dB (dBm) P1 dB 25 15 G1 dB (dBm) POUT (dBm) 25 20 15 10 5 40 30 add (%) GAIN (dB) MSG 15 28 G1 dB 10 ...GHz) FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain v...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-45171

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-45171
OCR Text ...35 30 29 P1 dB (dBm) P1 dB 25 20 15 G1 dB (dBm) POUT (dBm) 25 20 15 10 5 40 30 20 10 0 0 5 10 15 PIN (dBm) 20 25 30 0 1.0 add (...GHz) FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression and 1 dB Compressed Gain v...
Description 2-8 GHz Medium Power Gallium Arsenide FET

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    ATF-46101

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-46101
OCR Text ...gers. Total gate periphery is 1.25 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable de...GHz frequency range. This nominally 0.5 micron Electrical Specifications, TA = 25C Symbol P1 dB ...
Description 2-10 GHz Medium Power Gallium Arsenide FET

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    ATF-46171

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-46171
OCR Text ...gers. Total gate periphery is 1.25 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable de...GHz frequency Electrical Specifications, TA = 25C Symbol P1 dB G1 dB add gm IDSS VP Parameters a...
Description 2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)

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    BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
INFINEON TECHNOLOGIES AG
Part No. BAT14-014 BAT14-034 BAT14-044 BAT14-064 BAT14-074 BAT14-094 BAT14-104 BAT14-114 BAT14-124 BAT14-4 Q62702-D1019 Q62702-D1036 Q62702-D1066 Q62702-D1005 Q62702-D1026 Q62702-D1041 Q62702-D1051 Q62702-D1056 Q62702-D1061 Q62702-P1139
OCR Text ...ctrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Breakdown voltage IR = 10 A V(BR) Forward voltage VF...GHz BAT 14-014 BAT 14-034 f = 6 GHz BAT 14-044 BAT 14-064 f = 9.3 GHz BAT 14-074 BAT 14-094 f = 16 G...
Description Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管(培养基检测器和调音台的应用气密陶瓷封装垒二极管)
Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器

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    MAAM000060

Tyco Electronics
Part No. MAAM000060
OCR Text ...c +85c frequency (mhz) -35 -30 -25 -20 -15 -10 -5 0 0 200 400 600 800 1000 +25c -40c +85c frequency (mhz) output return loss over temperatur...ghz gain to 1 ghz typical performance curves: 20 db gain configuration output return loss i...
Description Broadband CATV Amplifier

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    CHR3794-QDG20 CHR3794-QDG21 CHR3694-QDG20 CHR3694-QDG21 CHR3694-QDG-11

United Monolithic Semiconductors
United Monolithic Semic...
Part No. CHR3794-QDG20 CHR3794-QDG21 CHR3694-QDG20 CHR3694-QDG21 CHR3694-QDG-11
OCR Text ...,1 0,2 0,3 0,4 0,5 0,6 0,7 -50 -25 0 25 50 75 100 125 tcase (c) pdiss. max. (w) pdiss. max. (w) tcase example of qfn 16l 3x3 back-side view...ghz) conversion gain (db) gc max @ -40c gc max @ +25c gc max @ +75c 0 2 4 6 8 10 12 14 16 18 20 36 ...
Description 37-40GHz Integrated Down converter
   37-40GHz Integrated Down converter

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