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Fairchild Semiconductor, Corp.
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Part No. |
ISL9R18120G2NL ISL9R18120P2NL
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OCR Text |
...ery time i f = 18a, di f /dt = 200a/s, v r = 780v, t c = 25 c - 300 - ns i rm(rec) maximum reverse recovery current - 6.5 - a q rr rever...1200 1400 di f /dt, current rate of change (a/s) t, recovery times (ns) v r = 780v, t c = 125 o c ... |
Description |
18A, 1200V Stealt Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247 18A, 1200V Stealth Diode 18 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
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File Size |
239.30K /
9 Page |
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it Online |
Download Datasheet |
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DYNEX SEMICONDUCTOR LTD
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Part No. |
DIM200MKS12-A000
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OCR Text |
... ce(sat) * (typ) 2.2v i c (max) 200a i c(pk) (max) 400a *(measured at the power busbars and not the auxiliary terminals) dim200mks12-a000 ig...1200 20 200 400 1435 6.25 2500 10 parameter collector-emitter voltage gate-emitter voltage continuo... |
Description |
200 A, 1200 V, N-CHANNEL IGBT
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File Size |
169.43K /
10 Page |
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it Online |
Download Datasheet |
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DYNEX SEMICONDUCTOR LTD
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Part No. |
DIM200WHS12-A000
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OCR Text |
... ce(sat) * (typ) 2.2v i c (max) 200a i c(pk) (max) 400a *(measured at the power busbars and not the auxiliary terminals) dim200whs12-a000 ha...1200 20 200 400 1390 6.25 2500 10 parameter collector-emitter voltage gate-emitter voltage continuo... |
Description |
200 A, 1200 V, N-CHANNEL IGBT
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File Size |
166.00K /
8 Page |
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it Online |
Download Datasheet |
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Thinki Semiconductor Co...
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Part No. |
STTH1512D
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OCR Text |
...e recovery current di f /dt = -200a/ s v f recommended m3 max. 1 di f /dt = -200a/ s ,t j =125 i f = 15a,v r =600v, maximum reverse ...1200 volt switchmode single fast recovery epitaxial diode pb ultrafast recovery time soft rec... |
Description |
15 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
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File Size |
484.29K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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