|
|
|
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
Part No. |
M38230G4-xxxFP M38230G4-xxxHP M38231G4-xxxHP M38232G4-xxxFP M38232G4-xxxHP M38233G4-xxxFP M38233G4-xxxHP M38234G4-xxxFP M38234G4-xxxHP M38235G4-xxxFP M38230G6-xxxFP M38230G6-xxxHP M38231G6-xxxFP M38231G6-xxxHP M38232G6-xxxFP M38232G6-xxxHP M38233G6-xxxFP M38233G6-xxxHP M38234G6-xxxFP M38234G6-xxxHP M38235G6-xxxFP M38235G6-xxxHP M38236G6-xxxHP M38237G6-xxxFP M38237G6-xxxHP M38238G6-xxxFP M38230G7-xxxFP M38230G7-xxxHP M38231G7-xxxFP M38231G7-xxxHP M38232G7-xxxFP M38232G7-xxxHP M38233G7-xxxFP M38233G7-xxxHP M38234G7-xxxFP M38234G7-xxxHP M38235G7-xxxFP M38235G7-xxxHP M38236G7-xxxFP M38236G7-xxxHP M38237G7-xxxFP M38237G7-xxxHP M38238G7-xxxFP M38238G7-xxxHP M38239G7-xxxFP M38239G7-xxxHP M38230G8-xxxFP M38230G8-xxxHP M38231G8-xxxFP M38231G8-xxxHP M38232G8-xxxFP M38232G8-xxxHP M38233G8-xxxFP M38233G8-xxxHP M38234G8-xxxFP M38234G8-xxxHP M38235G8-xxxFP M38235G8-xxxHP M38236G8-xxxFP M38236G8-xxxHP M38237G8-xxxFP M38237G8-xxxHP M38238G8-xxxFP M38238G8-xxxHP M38230GA-xxxFP M38230GA-xxxHP M38231GA-xxxFP M38231GA-xxxHP M38232GA-xxxFP M38232GA-xxxHP M38233GA-xxxFP M38233GA-xxxHP M38234GA-xxxFP M38234GA-xxxHP M38235GA-xxxFP M38235GA-xxxHP M38236GA-xxxFP M38236GA-xxxHP M38237GA-xxxFP M38237GA-xxxHP
|
Description |
18-Mbit (512K x 36/1M x 18) Flow-Through Sram; Architecture: Standard Sync, Flow-through; density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II Sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined Sram; Architecture: Standard Sync, Pipeline SCD; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through Sram; Architecture: Standard Sync, Flow-through; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through Sram with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync Sram; Architecture: QDR-II, 2 Word Burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II Sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II Sram 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II Sram 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync Sram; Architecture: Standard Sync, Pipeline SCD; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through Sram; Architecture: Standard Sync, Flow-through; density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined Sram with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II Sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II Sram 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync Sram; Architecture: QDR-II, 2 Word Burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II Sram 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II Sram 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
File Size |
901.80K /
76 Page |
View
it Online |
Download Datasheet |
|
|
|
Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
Part No. |
IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 IDT6168SA15PI IDT6168SA20PI IDT6168SA25LB IDT6168SA45SOB IDT6168 IDT6168LA15D IDT6168LA15DB IDT6168LA15P IDT6168LA15PB IDT6168LA15SO IDT6168LA15SOB IDT6168LA20D IDT6168LA20DB IDT6168LA20P IDT6168LA20PB IDT6168LA20PI IDT6168LA20SO IDT6168LA20SOB IDT6168LA25D IDT6168LA25DB IDT6168LA25LB IDT6168LA25P IDT6168LA25PB IDT6168LA25PI IDT6168LA25SO IDT6168LA25SOB IDT6168LA35D IDT6168LA35DB IDT6168LA35P IDT6168LA35PB IDT6168LA35SO IDT6168LA35SOB IDT6168LA45D IDT6168LA45DB IDT6168LA45LB IDT6168LA45P IDT6168LA45PB IDT6168LA45SO IDT6168LA45SOB IDT6168SA15D IDT6168SA15DB IDT6168SA15P IDT6168SA15PB IDT6168SA15SO IDT6168SA15SOB IDT6168SA20D IDT6168SA20DB IDT6168SA20P IDT6168SA20PB IDT6168SA20SO IDT6168SA20SOB IDT6168SA25D IDT6168SA25DB IDT6168SA25P IDT6168SA25PB IDT6168SA25PI IDT6168SA25SO IDT6168SA25SOB IDT6168SA35D IDT6168SA35DB IDT6168SA35P IDT6168SA35PB IDT6168SA35SO IDT6168SA35SOB IDT6168SA45D IDT6168SA45DB IDT6168SA45LB IDT6168SA45P IDT6168SA45PB IDT6168SA45SO IDT5962-8670502UA IDT5962-8670506RA
|
Description |
5.0V, 4k x 4, CMOS, Asynchronous, static ram From old datasheet system CMOS static ram 16K (4K x 4-BIT) 4K x 4 STANDARD Sram, 35 ns, PDIP20 CMOS static ram 16K (4K x 4-BIT) 4K x 4 STANDARD Sram, 35 ns, PDSO20 CMOS static ram 16K (4K x 4-BIT) 4K x 4 STANDARD Sram, 25 ns, CQCC20
|
File Size |
89.87K /
9 Page |
View
it Online |
Download Datasheet |
|
|
|
Semtech Corporation Semtech, Corp.
|
Part No. |
SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K
|
Description |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS High density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V,温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流 High density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) High density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) 0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE High density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V,温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度,高电压,标准恢复倍流整流(反向电5000V,温25℃时平均整流电流0.4A,高密度,高电压,标准恢复倍增整流器)
|
File Size |
50.69K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
Part No. |
CY14B104NA-ZSP20xCT CY14B104NA-ZSP20xIT CY14B104LA-BA25xC CY14B104NA-BA20xC
|
Description |
4 Mbit (512K x 8/256K x 16) nvSram; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; density: 4 Mb; Package: TSOP 256K x 16 NON-VOLATILE Sram, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSram; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSram; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; density: 4 Mb; Package: FBGA
|
File Size |
613.78K /
23 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|