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Integrated Silicon Solution, Inc
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| Part No. |
IS61QDPB42M36-400M3 IS61QDPB42M36-400M3L IS61QDPB44M18-400M3L IS61QDPB42M36-300M3 IS61QDPB42M36-300M3L IS61QDPB42M36-333M3 IS61QDPB42M36-333M3L IS61QDPB42M36-375M3 IS61QDPB42M36-375M3L IS61QDPB44M18-300M3 IS61QDPB44M18-300M3L IS61QDPB44M18-333M3 IS61QDPB44M18-333M3L IS61QDPB44M18-375M3 IS61QDPB44M18-375M3L IS61QDPB44M18-400M3
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| OCR Text |
...0F, 9E, 9D, 10B 2B, 3D, 3E, 2F, 3g, 3K, 2L, 3N, 3P 1B, 2C, 1E, 1F, 2J, 1K, 1L, 2M, 1P 10P, 11N, 11M, 10K, 11J, 11G, 10E, 11D, 11C 3B, 3C, 2D...active low. Read control, active low. 2M x 36 byte write control, active low. 4M x 18 byte write con... |
| Description |
72 Mb (2M x 36 & 4M x 18) QUADP (Burst of 4) Synchronous SRAMs
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| File Size |
644.64K /
28 Page |
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it Online |
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Samsung semiconductor
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| Part No. |
K7K1618U2C K7K1636U2C
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| OCR Text |
...,3d,11d,3e,10e,11e,2f,3f 11f,2g,3g,11g,3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defin... |
| Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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| File Size |
454.05K /
19 Page |
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it Online |
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Samsung semiconductor
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| Part No. |
K7K1636T2C K7K1618T2C
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| OCR Text |
...,3d,11d,3e,10e,11e,2f,3f 11f,2g,3g,11g,3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, write control pin, read active when high ld 8a synchronous load pin, bus cycle sequence is to be defin... |
| Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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| File Size |
440.39K /
19 Page |
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it Online |
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Samsung semiconductor
Maxim Integrated Products, Inc.
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| Part No. |
K7S1636U4C K7S1618U4C-EC330
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| OCR Text |
...9k,9g,10f,9e,9d,10b,2b,3d,3e,2f,3g,3k,2l,3n 3p,1b,2c,1e,1f,2j,1k,1l,2m,1p data outputs w 4a write control pin,active when low r 8a read control pin,active when low bw 0 , bw 1, bw 2 , bw 3 7b,7a,5a,5b block write control pin,active when low... |
| Description |
512Kx36 & 1Mx18 QDR II b4 SRAM
QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
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| File Size |
377.22K /
20 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
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| Part No. |
MCM63R818FC3.7R
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| OCR Text |
... the rising clock edge. 5l, 5g, 3g, 3l (a), (b), (c), (d) sbx input synchronous byte write enable: enables writes to byte x in conjunction with the sw input. has no effect on read cycles, active low. 4e ss input synchronous chip enable: re... |
| Description |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
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| File Size |
144.70K /
21 Page |
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Integrated Silicon Solution, Inc
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| Part No. |
IS61DDPB22M36 IS61DDPB22M36-375M3 IS61DDPB22M36-375M3L IS61DDPB22M36-400M3 IS61DDPB22M36-400M3L IS61DDPB24M18-375M3 IS61DDPB24M18-375M3L IS61DDPB24M18-400M3 IS61DDPB24M18-400M3L
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| OCR Text |
..., 10E, 11D, 10C 3B, 3D, 3E, 3F, 3g, 3K, 3L, 3N, 3P 2B, 3C, 2D, 2F, 2G, 3J, 2L, 3M, 2N 11P, 10M, 11L, 11K, 10J, 11F, 11E, 10C, 11B 2B, 3D, 3E...active high. Synchronizes load. Loads new address when low. 2M x 36 byte write control, active low. ... |
| Description |
72 Mb (2M x 36 & 4M x 18) DDR-IIP (Burst of 2) CIO Synchronous SRAMs
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| File Size |
584.40K /
24 Page |
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it Online |
Download Datasheet |
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Samsung semiconductor
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| Part No. |
K7S3236T4C K7S3218T4C
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| OCR Text |
...9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3g,3K,2L,3N 3P,1B,2C,1E,1F,2J,1K,1L,2M,1P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4...active when low Read Control Pin,active when low Block Write Control Pin,active when low Input Refer... |
| Description |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
441.06K /
20 Page |
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it Online |
Download Datasheet |
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Price and Availability
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