| |
|
 |
STMicro
|
| Part No. |
STTA3006CP STTA3006CW 4412
|
| OCR Text |
...
=tp/T
tp
dIF/dt(A/s)
400 500 600 700 800 900 1000
0.0 1E-4
1E-3
1E-1
1E+0
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 200 180 160 140 120 100 80 60 40 20 0
VR=400V Tj=125C IF=2*IF(a v) I... |
| Description |
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODES From old datasheet system
|
| File Size |
76.09K /
8 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
STMicro
|
| Part No. |
STTA3006PI STTA3006P STTA6006TV2 3176
|
| OCR Text |
...
VR=400V
IF=60A
100 200 300 400 500 600 700 800 900 1000
3/9
STTA6006TV1/2/ STTA3006P/PI
Fig. 5: Reverse recovery time versus dIF/dt.
trr(ns) 250 90% CONFIDENCE Tj=125 oC 225 VR= 400V 200 175 I F=60A 150 IF=30A 125 100 75 IF=15A... |
| Description |
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE From old datasheet system
|
| File Size |
81.07K /
9 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
http:// ADPOW[Advanced Power Technology]
|
| Part No. |
APT1201R5B APT1201R5BVR
|
| OCR Text |
...8
4.5V
4 4V 0 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
4 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1200v 10A 1.500 Ohm
|
| File Size |
63.04K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
http:// ADPOW[Advanced Power Technology]
|
| Part No. |
APT1201R6 APT1201R6B APT1201R6BVR
|
| OCR Text |
...
6 4.5V 4
2 4V 0 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0
2 4V 0 3 6 9 12 15 18 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON),... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1200v 8A 1.600 Ohm
|
| File Size |
62.51K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
BSM150GB120DN2E3166 150B12E2 C67076-A2112-A70
|
| OCR Text |
...s typ. max. Unit
td(on)
200 400
ns
VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6
Rise time
tr
100 200
VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6
Turn-off delay time
td(off)
600 800
VCC = 600 V, VGE = -15 V, ... |
| Description |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
| File Size |
130.94K /
9 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|