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ADPOW[Advanced Power Technology]
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| Part No. |
APT20M45SVR
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| OCR Text |
56a 0.045
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R... |
| Description |
POWER MOS V 200V 56a 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
94.99K /
4 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M85LVR APT50M85B2VR
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| OCR Text |
56a 0.085W
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(... |
| Description |
POWER MOS V 500V 56a 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
37.06K /
2 Page |
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Microsemi
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| Part No. |
APT20M45SVRG
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| OCR Text |
... 300 5630 1300 apt20m45svr 200v 56a 0.045 d 3 pak g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382... |
| Description |
MOSFET
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| File Size |
77.91K /
4 Page |
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Microsemi
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| Part No. |
APT20M45BVRG
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| OCR Text |
... rohs compliant 200v, 56a, 0.045 apt20m45bvr(g) power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect, increase packing density and reduces... |
| Description |
MOSFET
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| File Size |
340.46K /
4 Page |
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Microsemi
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| Part No. |
APT20M45BVFRG
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| OCR Text |
...5630 1300 apt20m45bvfr (g) 200v 56a 0.045 fredfet g d s to-247 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces... |
| Description |
FREDFETs
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| File Size |
144.47K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF90N08
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| OCR Text |
...
TM
Features
* * * * * * * 56a, 80V, RDS(on) = 0.016 @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
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| Description |
80V N-Channel MOSFET
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| File Size |
672.92K /
8 Page |
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it Online |
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Price and Availability
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