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  6.5a Datasheet PDF File

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    APT65GP60J

Advanced Power Technology
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Part No. APT65GP60J
OCR Text ...er On Voltage (VGE = 15V, I C = 65A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitte...
Description MOSFET
POWER MOS 7 IGBT

File Size 96.84K  /  6 Page

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    APT65GP60JDQ2

http://
Advanced Power Technology
Part No. APT65GP60JDQ2
OCR Text ...er On Voltage (VGE = 15V, I C = 65A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = 600V, ...
Description POWER MOS 7 IGBT

File Size 457.39K  /  9 Page

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    APT65GP60B2

Advanced Power Technology
http://
Part No. APT65GP60B2
OCR Text ...er On Voltage (VGE = 15V, I C = 65A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitte...
Description MOSFET
POWER MOS 7 IGBT

File Size 88.95K  /  6 Page

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    A930 A932S003500102 A930S000900100 A930S002300100 A930S003500100 A930S006000400 A931 A931S000900101 A931S002300101 A931S

LITTELFUSE[Littelfuse]
Part No. A930 A932S003500102 A930S000900100 A930S002300100 A930S003500100 A930S006000400 A931 A931S000900101 A931S002300101 A931S003500101 A931S006000401 A932 A932S000900102 A932S002300102
OCR Text ...0V > 10G < 1.5 pF 10kA 12kA 10A 65A * A930 S0 0090 01 00 A931 S0 0090 01 01 A932 S0 0090 01 02 90V +/- 20% <550V A930 S0 0230 01 00 A931 S0 0230 01 01 230V A932 S0 0230 01 02 A930 S0 0350 01 00 A931 S0 0350 01 01 350V A932 S0...
Description GAS DISCHARGE TUBE - 8x6mm

File Size 102.59K  /  2 Page

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    FDP65N06

Fairchild Semiconductor
Part No. FDP65N06
OCR Text 65A, 60V, RDS(on) = 0.016 @VGS = 10 V Low gate charge ( typical 132nC) Low Crss ( typical 35pF) Fast switching Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced usin...
Description 60V N-Channel MOSFET

File Size 592.39K  /  8 Page

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    ZXSDS2M832TA ZXSDS2M832TC ZXSDS2M832

ZETEX[Zetex Semiconductors]
Part No. ZXSDS2M832TA ZXSDS2M832TC ZXSDS2M832
OCR Text 65A SCHOTTKY DIODE COMBINATION SUMMARY Schottky Diode - VR = 60V; VF = 600mV(@1A); IC=1.65A DESCRIPTION Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier d...
Description Dual Schottky rectifier diode
MPPS Miniature Package Power Solutions

File Size 199.24K  /  6 Page

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    STD60N55 STD60N55-1 -STD60N55

意法半导
STMicroelectronics
Part No. STD60N55 STD60N55-1 -STD60N55
OCR Text 65A - DPAK - IPAK MDmeshTM low voltage Power MOSFET PRELIMINARY DATA General features Type STD60N55 STD60N55-1 VDSS 55V 55V RDS(on) <10.5m <10.5m ID 65A 65A Pw 110W 110W 3 1 Standard threshold drive 100% avalanche te...
Description N-channel 55V - 8.0m蟹 - 65A - DPAK - IPAK MDmesh??low voltage Power MOSFET
N-channel 55V - 8.0mз - 65A - DPAK - IPAK MDmeshlow voltage Power MOSFET
N-channel 55V - 8.0mз - 65A - DPAK - IPAK MDmesh⑩ low voltage Power MOSFET
N-channel 55V - 8.0m - 65A - DPAK - IPAK MDmesh low voltage Power MOSFET

File Size 198.16K  /  12 Page

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    STU60N55F3 STP60N55F3 STF60N55F3 STD60N55F3 60N55F3 STB60N55F3

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STU60N55F3 STP60N55F3 STF60N55F3 STD60N55F3 60N55F3 STB60N55F3
OCR Text ... 1MHz, VGS=0 VDD = 27V, ID = 65A VGS =10V (see Figure 15) 1. Pulsed: pulse duration = 300s, duty cycle 1.5% 4/19 STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical characteristics Table 5. Symbol td(on...
Description N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET

File Size 481.64K  /  19 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. QM50E3Y-H QM50E2Y-H QM50E2Y
OCR Text ...mitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=50A, IB1=-IB2=1A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- ...
Description MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 88.52K  /  6 Page

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