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  609.9 Datasheet PDF File

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP280W Q62702-F1504
OCR Text ...ITF = VJC = TR = MJS = XTI = 25.609 1.6163 5.6909 1.0651 14.999 36.218 11.744 6.2179 1.1943 2.3693 0 3 V V fF ps mA V ns - BF = IKF = BR...9 1V 3V 2V Semiconductor Group 6 Dec-12-1996 BFP 280W Power Gain Gma, Gms = f(VCE):__...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

File Size 59.70K  /  7 Page

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    EC3H02B

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. EC3H02B
OCR Text ...0.614 0.611 0.607 0.607 0.610 0.609 S11 -47.9 -83.2 -122.9 -142.2 -153.8 -161.8 -167.3 -172.2 -176.6 179.8 176.9 | S21 | 13.330 10.545 6.688 4.726 3.653 2.989 2.534 2.207 1.965 1.776 1.627 S21 150.0 129.6 107.4 95.9 87.5 80.7 75.1 70.1 65...
Description VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications

File Size 37.44K  /  5 Page

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    EC3H02C

Sanyo Semicon Device
Part No. EC3H02C
OCR Text ...0.614 0.611 0.607 0.607 0.610 0.609 S11 --47.9 --83.2 --122.9 --142.2 --153.8 --161.8 --167.3 --172.2 --176.6 179.8 176.9 S21 13.330 10.545 6.688 4.726 3.653 2.989 2.534 2.207 1.965 1.776 1.627 S21 150.0 129.6 107.4 95.9 87.5 80.7 ...
Description NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications

File Size 28.02K  /  5 Page

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    ICS5314AI11L ICS85314I-11 ICS85314AGI-11 ICS85314AGI-11LF ICS85314AGI-11LFT ICS85314AGI-11T ICS85314AI11 ICS85314AI-11 I

Integrated Circuit Syst...
ICST[Integrated Circuit Systems]
Part No. ICS5314AI11L ICS85314I-11 ICS85314AGI-11 ICS85314AGI-11LF ICS85314AGI-11LFT ICS85314AGI-11T ICS85314AI11 ICS85314AI-11 ICS85314AMI-11 ICS85314AMI-11T
OCR Text ...F should be 1.25V and R2/R1 = 0.609. VCC R1 1K Single Ended Clock Input CLK V_REF nCLK C1 0.1u R2 1K FIGURE 2. SINGLE ENDED SIGNAL...9 REV. C MAY 24, 2005 Integrated Circuit Systems, Inc. ICS85314I-11 LOW SKEW, 1-TO-5 DIFFE...
Description    LOW SKEW, 1-TO-5 DIFFERENTIAL-TO-2.5V/3.3V LVPECL FANOUT BUFFER

File Size 238.41K  /  18 Page

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    IRLM220A IRLM220ATF

Fairchild Semiconductor
International Rectifier
Part No. IRLM220A IRLM220ATF
OCR Text ...@ VDS = 200V Lower RDS(ON) : 0.609 (Typ.) IRLM220A BVDSS = 200 V RDS(on) = 0.8 ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. ...9 9 20 29 1.13 0.2 5 2 0.016 - 55 to +150 C 300 Units V A A V mJ A mJ V/ns W W/C Thermal Resistan...
Description 200V N-Channel A-FET
Advanced Power MOSFET
HEXFET Power MOSFET

File Size 240.81K  /  7 Page

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    Knox Semiconductor Inc
KNOX[Knox Semiconductor, Inc]
Knox Inc
Knox Semiconductor Inc
Part No. K330 K180 K120 K360 K300 K510 K150 K210 K240 K270 K390 K430 K470
OCR Text ... -65 to + 200 C 10% P.O. BOX 609 * ROCKPORT, MAINE 04856 * 207-236-6076 * FAX 207-236-9558
Description LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE
Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 8x15 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1800uF; Voltage: 10V; Case Size: 12.5x20 mm; Packaging: Bulk
   LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE

File Size 33.43K  /  1 Page

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    SC1189 SC1189SWTR

Semtech Corporation
Part No. SC1189 SC1189SWTR
OCR Text ...1.453 1.478 1.502 1.527 1.584 1.609 1.634 1.658 1.683 1.708 1.733 1.757 1.782 1.798 Typ 1.050 1.075 1.100 1.125 1.150 1.175 1.200 1.225 1...9 0.1uF 10 11 12 AGND GATE1 LDOS1 LDOS2 VCC PWRGD LDOEN CSCS+ PGNDH DH PGNDL GATE2 LDOV VID0 VID1 V...
Description Programmable synchronous DC/DC Converter, Dual LDO Controller

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    HGTG20N120C3D G20N120

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTG20N120C3D G20N120
OCR Text ...1,986 4,810,665 4,883,767 4,904,609 4,430,792 4,532,534 4,605,948 4,639,754 4,682,195 4,743,952 4,803,533 4,823,176 4,888,627 4,933,740 4,44...9 7.5 250 UNITS V A mA V V V nA A A Collector to Emitter Breakdown Voltage Collector to Emitter L...
Description 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45 A, 1200 V, N-CHANNEL IGBT, TO-247
45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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    HGTG20N120CN FN4533 G20N120

INTERSIL[Intersil Corporation]
Part No. HGTG20N120CN FN4533 G20N120
OCR Text ...1,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,53...9 6.9 10.2 155 200 23 17 200 220 0.9 2.0 2.8 MAX 250 5 2.4 3.5 250 200 250 28 22 240 270 1.1 2.5 3.3...
Description 63A/ 1200V/ NPT Series N-Channel IGBT
63A, 1200V, NPT Series N-Channel IGBT
From old datasheet system

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    HGTG20N120 HGTG20N120E2 G20N120

INTERSIL[Intersil Corporation]
Part No. HGTG20N120 HGTG20N120E2 G20N120
OCR Text ...8,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users ...9 3.0 3.1 3.3 4.5 250 1.0 3.5 3.6 3.8 4.0 6.0 250 150 200 620 1000 520 1000 0.83 TC = +25oC ...
Description 34A/ 1200V N-Channel IGBT
34A, 1200V N-Channel IGBT

File Size 167.11K  /  5 Page

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