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ST Microelectronics
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Part No. |
STP80NE03L-06
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OCR Text |
...ak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse ...06 30 v < 0.006 w 80 a 1/8
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance ... |
Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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File Size |
262.46K /
8 Page |
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it Online |
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ST Microelectronics
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Part No. |
STV80NE03L-06
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OCR Text |
...ak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse ...06 30 v < 0.006 w 80 a 1/8
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance ... |
Description |
N-CHANNEL 30V - 0.005 OHM - 80A POWERSO-10 STRIPFET MOSFET
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File Size |
273.35K /
8 Page |
View
it Online |
Download Datasheet
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
SPP80N06S2L-06 SPB80N06S2L-06
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OCR Text |
...
10
2
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2003-05-09
SPP80N06S2L-06 SPB80N06S2L-06
5 Typ. output characteristic ID = f (V DS); T j=25C parameter... |
Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 6.3 mOhm OptiMOS Power-Transistor 的OptiMOS功率晶体
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File Size |
309.50K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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Part No. |
SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06
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OCR Text |
...C
A 0.01 10 1 1 100 100 nA m 7 6.6 5 4.6 9.5 9.2 6.2 5.9
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resist...06 SPP80N03S2L-06,SPB80N03S2L-06
Electrical Characteristics Parameter Dynamic Characteristics Tra... |
Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
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File Size |
415.22K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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