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Raltron Electronics
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| Part No. |
SY02-HP2O
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| OCR Text |
...----Max ------------------Vcc-0.885 Vcc-0.885 5.25 (3.465) ---------------Vcc-0.885 Vcc-0.885 ----------3.465 ------------------------------...950 (24.13 mm)
.050 TYP (1.27 mm)
.100 (.2.54 mm)
MARKING LABEL
.100
10
11
TOP ... |
| Description |
SYNCHRONOUS EQUIPMENT CLOCK REGENERATOR
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| File Size |
169.89K /
5 Page |
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椋???″????浣?涓??)??????
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| Part No. |
MRF6S19100HSR3
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| OCR Text |
...88 mhz channel bandwidth acpr @ 885 khz offset ? - 51 dbc @ 30 khz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 1960 mhz, 1...950 x 0.084 microstrip z5 0.457 x 0.940 microstrip z6 0.083 x 0.940 microstrip c5 r2 v b... |
| Description |
RF Power Field Effect Transistors
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| File Size |
388.18K /
12 Page |
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Vishay Siliconix
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| Part No. |
53D102G063GJ6 53D222G063HL6 53D282G025GJ6 53D282G050HL6 53D382G050JL6 53D112G035GE6 53D212G035GJ6 53D322G035HJ6 53D472G035HL6 53D832G035JP6 53D560F250GE6 53D113G025JP6 53D131F250HJ6 53D692G016HJ6 53D132G050GJ6 53D461F200JP6 53D101F400JL6 53D432G025HJ6 53D103G016HL6 53D141F400JS6 53D151F400JS6 53D502G050JP6 53D622G025HL6 53D101F250GJ6 53D102G050GE6 53D192G050HJ6 53D351F200JL6
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| OCR Text |
...51] 0.760 0.020 [19.3 0.51] 0.885 0.020 [22.5 0.51] L 1.141 0.062 [29.0 1.58] 1.641 0.062 [41.7 1.58] 3.141 0.062 [79.8 1.58] 3.64...950 1470 1900 2540 3090 3810 1400 2210 1000 1250 263 420 520 560 790 820
6900.0 10000.0 2800.0 43... |
| Description |
Aluminum Capacitors 85 °C, Tubular, Axial Lead, General Purpose
Aluminum Capacitors 85 掳C, Tubular, Axial Lead, General Purpose
Aluminum Capacitors 85 隆?C, Tubular, Axial Lead, General Purpose
Aluminum Capacitors 85 ∑C, Tubular, Axial Lead, General Purpose
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| File Size |
166.25K /
4 Page |
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NEC Corp.
NEC[NEC]
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| Part No. |
NE5520279A-T1 NE5520279A
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| OCR Text |
...
MAG = |S21| |S12|
S11 MAG 0.885 0.885 0.883 0.885 0.887 0.890 0.895 0.900 0.905 0.911 0.916 0.921 0.924 0.926 0.927 0.929 0.930 0.931 0.935 0.937 0.941 0.944 0.949 0.950 0.955 0.956 0.958 0.957 0.959 0.959 0.962 0.961 0.965 0.967 0.971 ... |
| Description |
NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
163.74K /
7 Page |
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WJCI[WJ Communication. Inc.]
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| Part No. |
AP501-PCB AP501
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| OCR Text |
... channels forward, 1.23 MHz BW, 885 kHz offset. 2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, 5 MHz offset. 3. Pull-do...950 Ic c (m A ) 900 850 800 750 24
1960 MHz, +25 C, Icq=850mA
1960 MHz, +25 C, Icq=850mA
Ic... |
| Description |
PCS-band 4W HBT Amplifier Module
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| File Size |
376.71K /
5 Page |
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California Eastern Laboratories, Inc.
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| Part No. |
NE5520279A-T1-A
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| OCR Text |
... mag ang (db) 0.100 0.885 -152.5 11.510 98.5 0.021 10.3 0.830 -170.1 0.03 27.43 0.200 0.885 -166.9 5.882 87.7 0.02...950 158.3 0.285 7.7 0.006 - 36.0 0.947 166.0 2.04 11.00 2.500 0.955 157.3 0.267 5.8 ... |
| Description |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET 3.2五，2瓦报
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| File Size |
280.86K /
8 Page |
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it Online |
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Price and Availability
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