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For conducting Found Datasheets File :: 3578    Search Time::1.485ms    
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    UCLAMP3301H UCLAMP3301H.TCT UCLAMP3301H08

Semtech Corporation
Part No. UCLAMP3301H UCLAMP3301H.TCT UCLAMP3301H08
OCR Text ...rrent (ISB). To return to a non-conducting state, the but must be considered in applications where DC current through the device must fall below the ISB voltages are present. (approximately <50mA) and the voltage must fall below the VSB (no...
Description Low Voltage μClampTM for ESD and CDE Protection
Low Voltage レClampTM for ESD and CDE Protection

File Size 180.96K  /  7 Page

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    UCLAMP3301P UCLAMP3301P.TCT

Semtech Corporation
Part No. UCLAMP3301P UCLAMP3301P.TCT
OCR Text ...es are present. When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteris(c) 2008 Semtech Corp. 4 IPP Device Schematic & Pin Configuration Pin 2 Pin 1 EPD TVS IV Characteristic Cur...
Description Low Voltage μClampTM for ESD and CDE Protection
Low Voltage レClampTM for ESD and CDE Protection

File Size 184.68K  /  7 Page

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    FPAB30BH60

Fairchild Semiconductor
Part No. FPAB30BH60
OCR Text ... Normal operation - IGBT ON and conducting current P2 : Under voltage detection P3 : IGBT gate interrupt P4 : Fault signal generation P5 : Under voltage reset P6 : Normal operation - IGBT ON and conducting current Fig. 6. Under-Voltage P...
Description Smart Power Module(SPM?) for Front-End Rectifier
Smart Power Module(SPM㈢) for Front-End Rectifier

File Size 218.29K  /  12 Page

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    SMF3.3 SMF3.3.TC SMF3.3.TCT

Semtech Corporation
Part No. SMF3.3 SMF3.3.TC SMF3.3.TCT
OCR Text ...tional Lines When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristics due to its structures. This point is defined on the curve by the snap-back voltage (VSB) and snap-back current (...
Description 3.3 Volt TVS Array For ESD and Latch-Up Protection

File Size 173.55K  /  8 Page

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    TCM1030DR TCM1060D TCM1060DR TCM1060P LB1201AB LB1201AS TISP61060D TISP61060DR TISP61060P TCM1030D TCM1030P

Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
Part No. TCM1030DR TCM1060D TCM1060DR TCM1060P LB1201AB LB1201AS TISP61060D TISP61060DR TISP61060P TCM1030D TCM1030P
OCR Text conducting P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS Copyright (c) 1997, Power Innovations Limited, UK SEPTEMBER 1995 - REVISED SEPTEMBER 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION q Dual Voltage-Programmable Protecto...
Description DUAL FORWARD-conducting P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 双远期导电的P -可编程门晶闸管过压保

File Size 284.44K  /  14 Page

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    SLVU2.8-4.TB SLVU2.8-4.T SLVU2.8-4.TBT

Samtec, Inc
Semtech Corporation
Part No. SLVU2.8-4.TB SLVU2.8-4.T SLVU2.8-4.TBT
OCR Text ..., but will "punch-through" to a conducting state. This structure results in a device with superior dc electrical parameters at low voltages while maintaining the capability to absorb high transient currents. The IV characteristic curve of t...
Description EPD TVS Diode Array For ESD and Latch-Up Protection

File Size 198.09K  /  9 Page

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    LINER[Linear Technology]
Part No. LTC4413 4413F LTC4412HV LTC4413EDD LTC1558 LTC1559 LTC1998 LTC4054 LTC4055 LTC4350 LTC4351 LTC4411 LTC4412
OCR Text ...Indicate if Selected Channel is conducting Programmable Channel ON/OFF Low Profile (0.75mm) 10-Lead 3mm x 3mm DFN Package The LTC(R)4413 contains two monolithic ideal diodes, each capable of supplying up to 2.6A from input voltages betwe...
Description Dual 2.6A, 2.5V to 5.5V, Ideal Diodes in 3mm 3mm DFN
From old datasheet system
Dual 2.6A, 2.5V to 5.5V, Ideal Diodes in 3mm × 3mm DFN

File Size 145.92K  /  12 Page

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    RCLAMP2504P08 RCLAMP3304P RCLAMP3304P.TCT RCLAMP2504P RCLAMP2504P.TCT

http://
Semtech Corporation
Part No. RCLAMP2504P08 RCLAMP3304P RCLAMP3304P.TCT RCLAMP2504P RCLAMP2504P.TCT
OCR Text ...ring diodes are forward biased, conducting the transient current away from the sensitive circuitry, through the internal TVS to ground. Data lines are connected at pins 1, 2, 5 and 6. The center pin should be connected directly to a ground ...
Description RailClamp? 2.5V & 3.3V TVS Arrays
RailClamp庐 2.5V & 3.3V TVS Arrays
RailClamp㈢ 2.5V & 3.3V TVS Arrays

File Size 198.68K  /  11 Page

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    SFC3.3-4.BCT SFC3.3-4

Semtech Corporation
Part No. SFC3.3-4.BCT SFC3.3-4
OCR Text ...es are present. When the TVS is conducting current, it will exhibit a slight "snap-back" or negative resistance characteristics due to its structures. This point is defined on the curve by the snap-back voltage (VSB) and snap-back current (...
Description Low Voltage ChipClampΤΜ Flip Chip TVS Diode Array
Low Voltage ChipClampビヌ Flip Chip TVS Diode Array

File Size 214.04K  /  7 Page

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    C30902E C30921S C30902S C30921E

PerkinElmer Optoelectro...
PERKINELMER[PerkinElmer Optoelectronics]
Part No. C30902E C30921S C30902S C30921E
OCR Text ...hown in Figure 10. To be in the conducting state at VBR two conditions must be met: 1. The avalanche must have been triggered by either a photoelectron or a bulk-generated electron entering the avalanche region of the diode. (Note: holes ar...
Description (C309xxx) Silicon Avalanche Photodiodes

File Size 231.03K  /  7 Page

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For conducting Found Datasheets File :: 3578    Search Time::1.485ms    
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