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duration Datasheet PDF File

For duration Found Datasheets File :: 71189 Search Time::2.078ms
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				NXP Semiconductors
Part No.	BC53-10PA BC53-16PA BCP53-10 BCX53-10 BCP53-16 BC53PA
OCR Text	...am bient as a function of pulse duration for sot223; typical values fr4 pcb, mounting pad for collector 1 cm 2 fig 5. transient thermal impedance from junction to am bient as a function of pulse duration for sot223; typical values 006aac6...
Description	80 V, 1 A PNP medium power transistors
File Size	1,127.64K / 22 Page	View it Online	Download Datasheet

				Superworld Electronics
Part No.	L201610
OCR Text	...here will be some risk > 30 the duration of the applied forces shall be 60(+5) sec superworld electronics (s) pte ltd note : specifications subject to change without notice. please check our website for latest information. pg. 4 13.10...
Description	FERRITE CHIP INDUCTORS
File Size	341.33K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. Intersil Corporation
Part No.	RFL4N12 RFL4N15
OCR Text	...Time NOTE: 2. Pulse Test: pulse duration 300s max, duty cycle 2%. SYMBOL VSD trr ISD = 2A ISD = 2A, dISD/dt = 100A/s 200 TEST CONDITIONS MIN TYP MAX 1.4 UNITS V ns 5-2 RFL4N12, RFL4N15 Typical Performance Curves 1.2 POWER DISSIPATI...
Description	4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
File Size	31.43K / 4 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. Vishay Siliconix
Part No.	SI5856DC
OCR Text	...3 10-2 10-1 1 Square Wave Pulse duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Foot Duty C...
Description	N-Channel 1.8-V (G-S) MOSFET With Schottky Diode
File Size	81.66K / 6 Page	View it Online	Download Datasheet

				Intersil Corporation Intersil, Corp.
Part No.	HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3
OCR Text	... 10 5 5 0 0 PULSE duration = 300s, TC = 25oC 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACT...
Description	60V/ 10A Half Bridge Power MOSFET Array 60V, 10A Half Bridge Power MOSFET Array 20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
File Size	58.60K / 8 Page	View it Online	Download Datasheet

				Power Innovations Ltd Power Innovations Limited Power Innovations International, Inc.
Part No.	TISP61089A
OCR Text	...EAK ON-STATE CURRENT vs CURRENT duration TI6HAC ITSM(t) - Non-Repetitive Peak On-State Current - A 10 9 8 7 6 5 4 3 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C GROUND RETURN = 2xITS...
Description	DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
File Size	254.54K / 17 Page	View it Online	Download Datasheet

For duration Found Datasheets File :: 71189 Search Time::2.078ms
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