e-amps adc. pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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e-amps adc. Datasheet PDF File

For e-amps adc. Found Datasheets File :: 3095 Search Time::4.781ms
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				MOTOROLA INC MOTOROLA[Motorola, Inc]
Part No.	MTB20N20E ON2400
OCR Text	E-FET.TM High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of hou...AMPS) VGS = 10 V 30 9V 8V I D , DRAIN CURRENT (AMPS) 7V 40 35 30 25 100C 20 15 10 5 10 0 2.0 2.5 3.0...
Description	TMOS POWER FET 20 AMPERES 200 VOLTS From old datasheet system
File Size	258.36K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G
OCR Text	E-FETTM Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed ...AMPS) TJ = 25C VGS = 10 V 7V 20 5V ID , DRAIN CURRENT (AMPS) 4.5 V 4V 10 3.5 V 5 3V 2V 0 0 1 2 3 4 5...
Description	TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
File Size	93.40K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGS13002D-D
OCR Text	...industry standard package (to92 e 1.0 watt) ? high speed e off : typical 6.5 j @ i c = 0.3 a; t c = 125 c and dv/dt = 1000 v/ s ? ro...amps) 22 12 7 2 t c , case temperature ( c) 50 125 10 8 6 2 0 100 1.0 i c , collector current (amps...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	119.88K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTW35N15E
OCR Text	E-FET.TM Power Field Effect Transistor TO-247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET...AMPS) 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 5.0 V 6.0 V TJ = 25C VGS = 10 V 9.0 V 7.0 V 70 8...
Description	TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
File Size	169.40K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTD3055L170-1 NTD3055L170-1G NTD3055L170T4G NTD3055L170 NTD3055L170G NTD3055L170T4 NTD3055L170-001
OCR Text	...y Time Fall Time Gate Charge Ga e C a ge (VDS = 48 Vdc, ID = 9.0 Adc, Vdc 9 0 Adc VGS = 5.0 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS...AMPS) ID, DRAIN CURRENT (AMPS) 16 VDS 10 V 12 12 8 8 4V 3.5 V 4 3V 0 0 1 2 3 4 5 ...
Description	Power MOSFET 9.0 Amps, 60 Volts, Logic Level N-Channel DPAK 9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
File Size	77.86K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD3055VL MTD3055VL_D ON2500
OCR Text	... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) 20 16 12 3.5 V 8 3V 4 0 2.5 V 0 1 2 3 4 5 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 TJ = 25C VGS =...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM From old datasheet system
File Size	209.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD3055V MTD3055V_D ON2501
OCR Text	... devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed ...AMPS) 20 16 12 8 5V 4 4V 0 0 1 2 3 4 5 0 2 3 4 5 6 7 8 9 10 6V TJ = 25C VGS = 10 V 9V 8V I D , DRAIN...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM From old datasheet system
File Size	205.70K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MJW3281A06 MJW1302AG MJW3281AG MJW1302A MJW3281A
OCR Text	...erved for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 13 and 14 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case tempe...
Description	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS
File Size	70.84K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGW20N120-D
OCR Text	...ated mounting hole ? high speed e off : 160 j/a typical at 125 c ? high short circuit capability 10 s minimum ? robust high voltage ...amps) 12.5 v 17.5 v 15 v 10 v 30 20 0 8 4 02 6 40 10 50 60 v ge = 20 v t j = 125 c v ce , collect...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	125.44K / 6 Page	View it Online	Download Datasheet

For e-amps adc. Found Datasheets File :: 3095 Search Time::4.781ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |