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    HYE25L128160AC-8 HYB25L128160AC-75

Infineon Technologies A...
Infineon Technologies AG
Part No. HYE25L128160AC-8 HYB25L128160AC-75
OCR Text ...als. 4. power down mode can not entry in the burst cycle. address input for mode set (mode register operation) 5. after deep power down mode...level high t0 t2 t1 t5 t4 t7 t6 t18 2 clock min. ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ t13 ~ ~ ~ ~ t10 t9 t12 ...
Description 128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票

File Size 832.02K  /  50 Page

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    Etron Tech
Part No. EM636165TS
OCR Text ...tivating the clock controls the entry to the power down and self refresh modes. cke is synchronous except after the device enters power do...level h=high level 2. cke n signal is input level when commands are provided. cke n-1 signal i...
Description 1M x 16 Synchronous DRAM

File Size 770.51K  /  74 Page

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Magnetrol International, Inc.
Part No. T32-003N-A3D T31-002N-10A
OCR Text ...unting. ensure that the conduit entry points down. see figure 2. caution: the tuffy ii must be installed with the conduit connection pointin...level. 2. mount cage as close to vessel as possible to provide more accurate level in cage. long pip...
Description Tuffy? II Liquid Level Controls with Electric Switches

File Size 556.21K  /  28 Page

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Part No. MH32S72AVJA-6
OCR Text ...op h x l h h h x x x row adress entry & bank activate act h x l l h h v v v single bank precharge pre h x l l h l v l x precharge all bank p...level, l = low level, v = valid, x = don't care, n = ck cycle number note: 1.a7-9 = 0, a0-6 = mode a...
Description 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 965.75K  /  56 Page

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    Mitsubishi Electric Corporation
Part No. MH8S72DBFD-8
OCR Text ...op h x l h h h x x x row adress entry & bank activate act h x l l h h v v v single bank precharge pre h x l l h l v l x precharge all bank p...level, l = low level, v = valid, x = don't care, n = ck cycle number note: 1.a7-9 = 0, a0-6 = mode a...
Description 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 956.83K  /  56 Page

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Part No. MH16S72DCFA-6
OCR Text ...op h x l h h h x x x row adress entry & bank activate act h x l l h h v v v single bank precharge pre h x l l h l v l x precharge all bank p...level, l = low level, v = valid, x = don't care, n = ck cycle number note: 1.a7-9 = 0, a0-6 = mode a...
Description 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 954.69K  /  56 Page

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Part No. SN54BCT8244AJT SNJ54BCT8244AJT
OCR Text ...capture-dr state. shift-dr upon entry to the shift-dr state, the data register is placed in the scan path between tdi and tdo and, on the fi...level present in the least-significant bit of the selected data register. while in the stable shift-...
Description SCAN TEST DEVICES WITH OCTAL BUFFERS

File Size 471.92K  /  26 Page

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    Mitsubishi Electric Corporation
Part No. MH8S72BBFD-8
OCR Text ...op h x l h h h x x x row adress entry & bank activate act h x l l h h v v v single bank precharge pre h x l l h l v l x precharge all bank p...level, l = low level, v = valid, x = don't care, n = ck cycle number note: 1.a7-9 = 0, a0-6 = mode a...
Description 603,979,776-BIT ( 8,388,608-WORD BY 72-BIT ) Synchronous DYNAMIC RAM

File Size 746.05K  /  56 Page

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    Electronic Theatre Controls, Inc.
Part No. V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C1256164VAUT8I V53C1256164VAUS8I V53C1256162VAUS8I V53C1256162VAUT7IPC V53C1256164VAUS10IPC V53C1256164VAUS8IPC V53C1256164VAUT8IPC V53C1256162VAUS10IPC V53C1256162VAUS8IPC V53C1256164VAUS7IPC V53C1256164VAUT7IPC V53C1256162VAUT10IPC V53C1256164VAUT10IPC V53C1256162VAUT10EPC V53C1256164VAUT7EPC V53C1256164VBUT10EPC V53C1256162VBUT8EPC V53C1256162VBUT7EPC V53C1256162VAUT8EPC V53C1256162VALT7EPC V53C1256162VAUS7EPC V53C1256162VBLS7EPC V53C1256162VBUT10PC V53C1256162VBUT7IPC V53C1256162VBUT10I V53C1256164VALS7I V53C1256162VBLS7IPC V53C1256162VALT10EPC V53C1256164VBLS10PC V53C1256164VBUS10PC V53C1256164VALT8I V53C1256162VBLS10IPC V53C1256162VBLS10EPC
OCR Text ...als. 4. power down mode can not entry in the burst cycle. 5. after deep power down mode exit a full new initialization of memory device is...level is required 2nd auto refresh command inputs must be stable for 200 s low power mode register...
Description 256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16

File Size 539.11K  /  46 Page

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    SIEMENS AG
Part No. HYB39S128160CT HYB39S128800CT
OCR Text ...ice. 5. power down mode can not entry in the burst cycle. address input for mode set (mode register operation) operation device state cke n...level high t0 t2 t1 t5 t4 t7 t6 t18 2 clock min. ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ ~ t13 ~ ~ ~ ~ t10 t9 t12 ...
Description 128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8)同步DRAM28M的(4 × 4分列位8)同步动态RAM)的

File Size 285.67K  /  42 Page

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